PMGD290XN,115 Allicdata Electronics
Allicdata Part #:

1727-3126-2-ND

Manufacturer Part#:

PMGD290XN,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 20V 0.86A 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Su...
DataSheet: PMGD290XN,115 datasheetPMGD290XN,115 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.07173
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 860mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
Power - Max: 410mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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PMGD290XN,115 is a high-performance N-channel enhancement mode power field-effect transistor (FET) array manufactured by Semitec Group. It is a single-packaged array of two complimentary N-Channel (power MOSFETs), p channel MOSFETs and a single N-Channel logic-level MOSFET. It is typically used in high power applications such as power management, DC-DC converters and other low voltage power supply circuits.

This device is made up of an array of transistors, which function as four separate switches, allowing current to flow in a given direction as long as a voltage is applied. Each transistor can be used either as an enhancement mode or as a logic level N-channel FET. The enhancement mode allows the current to be switched on and off quickly with very low power consumption while the logic level allows the MOSFET to be used as a digital switch.

The PMGD290XN,115 can be used to switch off and on the power supply to various circuits. It has high current capacity, low ON resistance and high switching speed, making it ideal for use in power management, DC-DC converters and low voltage power supplies. The transistor array allows for rapid switching of the current to the circuit. This makes it ideal for high-speed applications.

The PMGD290XN,115 can also be used to drive high capacitance loads such as battery chargers, DC-DC converters, mobile phones and portable chargers. It is also suitable for use in voltage regulators for powering devices. It has low gate threshold voltage, high maximum drain current, low power consumption and high gain. All of these features make the PMGD290XN,115 ideal for high-performance power management applications.

The PMGD290XN,115 is a great device for both commercial and industrial applications. It can be used in high voltage power supplies, switching regulators, LED dimming, communications, industrial automation and many more. It can also be used in automotive and communication systems as it has low gate leakage current, excellent switching performance and high ESD protection.

As these MOSFET transistors can be used in many different applications, they have to be of high quality and reliable. The PMD290XN,115 has passed all the tests necessary to be UL listed and certified by the UL 1577 CSA. It is also compliant with the RoHS directive, making it safe and reliable to be used in various industrial and commercial applications.

For high-power reliability and performance, the PMGD290XN,115 is an excellent device. It has a low ON resistance, low gate threshold voltage and high maximum drain current, making it suitable for use in applications that require high power reliability and performance. Its array structure is also capable of providing a rapid response to changes in current flow, making it ideal for use in switching regulators, LED dimming and other high power electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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