PMN40ENEX Allicdata Electronics
Allicdata Part #:

1727-2734-2-ND

Manufacturer Part#:

PMN40ENEX

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 5.7A 6TSOP
More Detail: N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Sur...
DataSheet: PMN40ENEX datasheetPMN40ENEX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07890
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PMN40ENEX is an advanced N-channel MOSFET specifically designed for power management applications. It consists of a single N-channel enhancement mode MOSFET in a low-profile, hermetically sealed leadless ceramic package. The PMN40ENEX has a unique combination of features that make it suitable for high-power, power management applications in a wide range of industries. It offers low on-state voltage, high energy efficiency, and low switching losses, making it ideal for designs that need to control the flow of power in high-voltage, heavy-duty systems.

The PMN40ENEX is designed to provide high-performance MOSFETs with an excellent compromise between cost and performance. It features a low on-state voltage, high gate breakdown voltage, surface mount technology, and hermetically sealed for superior high temperature performance. Additionally, it comes with an integrated charge-reductionized sense-FET design which provides increased protection for RF switch load current noise.

The physical structure of the PMN40ENEX consists of a single N-channel enhancement mode MOSFET, which is housed in a low-profile, hermetically sealed leadless ceramic package. The N-channel MOSFET has a series of source, drain, and gate connections, which are connected to a circuit board. The source and drain contacts of the MOSFET are connected to separate power sources and loads, while the gate is connected to a gate or signal voltage for control of the switching state.

The PMN40ENEX provides excellent efficiency in both on and off states, thanks to its low on-state voltage drop, low gate voltage, and low leakage current. Additionally, it has excellent reliability, due to its hermetic seal and state-of-the-art packaging process. The PMN40ENEX is primarily used in three application fields: telecom, automotive, and electrical power management.

In the telecom industry, the PMN40ENEX is used in high-speed switching applications, such as those found in next-generation communication systems. It is also used in voltage regulating applications, such as the control of power supply voltages in switching networks. In automotive applications, the PMN40ENEX MOSFET is used in high-load and high-frequency switching, as well as voltage regulation.

In electrical power management, the PMN40ENEX is used to control the flow of power in systems such as solar cells, batteries, and other DC to DC converter systems. Its low on-state voltage and high efficiency make it ideal for such applications.

The PMN40ENEX operates based on the principle of MOSFETs (Metal Oxide Semiconductor FETs). MOSFETs are transistors used for the control of power flow in a circuit, and are the basis of the vast majority of electronics. They rely on a voltage being applied to the gate of the MOSFET, in order to control the flow of current through the source and drain. By adjusting the voltage, the amount of current that can flow can be controlled.

The PMN40ENEX uses an advanced manufacturing process to provide an excellent combination of low on-state voltage, high energy efficiency, and low switching losses. It also provides superior temperature performance and reliability, thanks to its hermetically sealed construction.

In summary, the PMN40ENEX is an advanced N-channel MOSFET designed for high-power, power management applications in a wide range of industries. It features low on-state voltage, high energy efficiency, and low switching losses. It is primarily used in telecom, automotive, and power management applications. It operates on the principle of MOSFETs, using a voltage applied to the gate to control the flow of current.

The specific data is subject to PDF, and the above content is for reference

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