
Allicdata Part #: | 1727-7513-2-ND |
Manufacturer Part#: |
PMN42XPEAH |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 5.7A 6TSOP |
More Detail: | P-Channel 20V 5.7A (Ta) 500mW (Ta), 8.33W (Tc) Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.10556 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta), 8.33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1410pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMN42XPEAH devices are among the latest semiconductor products, specifically transistor types known as Field Effect Transistors (FETs) and Metal Oxide Semiconductor FETs (MOSFETs). These are essentially single-gate, 4-lead devices that are designed in a single package, utilizing their own passivation system. With a wide range of application areas, from power electronics to data communication, PMN42XPEAH devices are a very versatile and reliable product.
In operation, the objective of the PMN42XPEAH device is to allow the controlled transfer of electrical charge from an input source to an output using the FETs’ “on” and “off” states. When the device is switched “on”, the output voltage is supplied with the same voltage as the input. When the device is switched “off”, no current transfers through the activated gate and both output and input voltages remain unchanged. This state allows the device to serve as a voltage converter and amplifier, as the input impedance can be made very low, allowing more current to flow through the circuit.
The PMN42XPEAH device is commonly used in the power electronics field, as it can efficiently regulate the transfer of current from one end to the other. As a result, it can be used as a DC-DC converter, low-noise amplifier and modulator. These devices can also be used in data communication, such as RF modulators, oscillators and other frequency modulators, which rely on the device’s ability to accurately control the output voltage. In addition, they can be used in low-power applications, such as computer peripheral circuitry and consumer electronic devices.
In a power electronic circuit, the PMN42XPEAH device can be used as a transistor replacement, typically in an H-bridge circuit. This transistors function as both a switch and amplifier, depending on the input and output voltages. When both outputs are enabled, the transistor acts as a switch, allowing the current to be transferred between inputs, while when a single output is enabled, it functions as an amplifier. In this latter case, the transistor allows for greater control of the output voltage, with the input and output voltages being proportional.
To summarize, PMN42XPEAH devices are versatile semiconductor products that are well suited to a number of application fields. Utilizing their four-lead package construction and their own passivation system, these products are reliable and efficient in their operation. Typical applications include power electronics, data communication, and low-power devices, as well as H-bridge circuits for transistor replacements. In each case, the device allows for the controlled transfer of electrical charge, through either switching or amplification.
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