PMN45EN,135

PMN45EN,135 is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed and produced by Mitsubishi. It belongs to the family of N-Channel MOSFETs and is designed to allow efficient use of the power source to generate power of various levels. It is available in TO-263 and TDSO-14 packages.

The PMN45EN,135 has many applications, including in switching speed, amplification, voltage regulation, and signal modulation. It can be used for logic control and for current switching, which makes it suitable for a variety of purposes. Some common uses include audio amplifiers, motor speed control, digital logic circuits, and power switching circuits.

MOSFETs function by allowing electron flow between the gate and the source. They are composed of three layers: a substrate layer (S), a gate layer (G), and a drain layer (D). The potential difference between the gate and the source controls the electron flow from the source to the drain. If the source-gate voltage is low, the MOSFET won’t conduct, while if the source-gate voltage is high, the MOSFET will allow electron flow.

The PMN45EN,135 is designed specifically to minimize the need for protection circuits due to its high- safe operating area. It also operates at low drain-source voltage, allowing for high-current switching without overheating the device. This makes it well-suited for applications in which the current levels may vary greatly.

The PMN45EN,135 also features low drain-source “on-resistance,” meaning that it can drive higher currents with lower losses than many other MOSFETs. This makes it useful for power-supply applications, as it can deliver higher output currents with less power consumed.

In summary, the PMN45EN,135 is a single MOSFET that is used for a wide variety of applications. Its advantages include low drain-source voltage, high-safe operating area, and low drain-source resistance. It is a versatile device that can be used in many different types of circuits and provides an efficient way to switch and regulate power.