PMN40LN,135 Allicdata Electronics
Allicdata Part #:

568-7422-2-ND

Manufacturer Part#:

PMN40LN,135

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 5.4A 6TSOP
More Detail: N-Channel 30V 5.4A (Tc) 1.75W (Tc) Surface Mount 6...
DataSheet: PMN40LN,135 datasheetPMN40LN,135 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMN40LN,135 Application Field and Working Principle

The PMN40LN,135 is a high-performance, lownoise, low-drain-source on-resistance MOSFET (metal oxide semiconductor field effect transistor). It is made in a N-channel, 4-pin package. In this article, we\'ll discuss the application field and working principle of the PMN40LN,135.

Application Field

The PMN40LN,135 can be used in many applications, such as power management, audio, and graphics applications. It is used for high-side switch applications and for low-side switch applications, such as DC-DC converters and motor drives. Due to its low on-resistance (Rdson), it is also suitable for high-capacity load switching, such as HDMI and USB power delivery, and for low-Ohm, low-power switching, such as single supply system, automotive applications, and mobile I/O power management.

Working Principle

The PMN40LN,135 operates on the same principle as standard MOSFETs. It consists of a doped semiconductor material, usually silicon, and uses the application of an electric field to turn it ON and OFF. In the "OFF" state, the drain-source is disconnected, and in the "ON" state, the drain-source is connected. The DC gate bias current is used to control the ON/OFF status of the FET. The PMN40LN,135 also contains an N-type diffusion layer, which helps to reduce its on-resistance, thereby allowing it to support higher current levels.

Conclusion

The PMN40LN,135 is a high-performance, low-noise, low-drain-source on-resistance MOSFET. It can be used in many applications, such as power management, audio, and graphics applications. It operates on the same principle as standard MOSFETs and is an excellent choice for high-side and low-side switch applications. Its low on-resistance makes it suitable for high-capacity and low-power switching.

The specific data is subject to PDF, and the above content is for reference

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