| Allicdata Part #: | 568-7422-2-ND |
| Manufacturer Part#: |
PMN40LN,135 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 30V 5.4A 6TSOP |
| More Detail: | N-Channel 30V 5.4A (Tc) 1.75W (Tc) Surface Mount 6... |
| DataSheet: | PMN40LN,135 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | 6-TSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 555pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.8nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 38 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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PMN40LN,135 Application Field and Working Principle
The PMN40LN,135 is a high-performance, lownoise, low-drain-source on-resistance MOSFET (metal oxide semiconductor field effect transistor). It is made in a N-channel, 4-pin package. In this article, we\'ll discuss the application field and working principle of the PMN40LN,135.
Application Field
The PMN40LN,135 can be used in many applications, such as power management, audio, and graphics applications. It is used for high-side switch applications and for low-side switch applications, such as DC-DC converters and motor drives. Due to its low on-resistance (Rdson), it is also suitable for high-capacity load switching, such as HDMI and USB power delivery, and for low-Ohm, low-power switching, such as single supply system, automotive applications, and mobile I/O power management.
Working Principle
The PMN40LN,135 operates on the same principle as standard MOSFETs. It consists of a doped semiconductor material, usually silicon, and uses the application of an electric field to turn it ON and OFF. In the "OFF" state, the drain-source is disconnected, and in the "ON" state, the drain-source is connected. The DC gate bias current is used to control the ON/OFF status of the FET. The PMN40LN,135 also contains an N-type diffusion layer, which helps to reduce its on-resistance, thereby allowing it to support higher current levels.
Conclusion
The PMN40LN,135 is a high-performance, low-noise, low-drain-source on-resistance MOSFET. It can be used in many applications, such as power management, audio, and graphics applications. It operates on the same principle as standard MOSFETs and is an excellent choice for high-side and low-side switch applications. Its low on-resistance makes it suitable for high-capacity and low-power switching.
The specific data is subject to PDF, and the above content is for reference
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PMN40LN,135 Datasheet/PDF