Allicdata Part #: | 568-6833-2-ND |
Manufacturer Part#: |
PMR280UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 0.98A SOT416 |
More Detail: | N-Channel 20V 980mA (Tc) 530mW (Tc) Surface Mount ... |
DataSheet: | PMR280UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 530mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 20V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.89nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 980mA (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMR280UN is a type of semiconductor that is widely used in electronic applications. It belongs to the family of transferring resistors, or transistors, and particularly to the family of field effect transistors, or FETs, and more specifically to the single MOSFETs. The PMR280UN is used in power supplies, amplifiers, switching and in RF applications.
The structure of the PMR280UN is quite simple. The fabric of the transistor consists of four terminals, the source, the drain, the gate and the substrate or body, as well as a gate oxide in between the source and the gate. As such, the operation of the MOSFET is based on a modulation of its conductance which implies that when a voltage is applied to the gate, the conductance of the source-drain path is subject to changes.
The PMR280UN can be used in applications where operating conditions are medium or low, meaning that the junction voltage is not very high. This type of transistor is efficient at amplifying electronic signals, such as audio or RF signals, and also controlling the power that is being applied to the load. It is commonly used for controlling the power supply of motors, relays and other types of components.
Due to the integrated gate oxide layer, the PMR280UN is particularly suitable for switch mode power supplies, as the gate can be used to switch the device on and off. This type of transistor is a good choice for applications where low voltage and low power dissipation are required. It can also be used in low frequency and high frequency switching applications.
Another advantage of using a PMR280UN is its high capacitance when compared to other types of transistors. This is beneficial in that it ensures a low switching time and a high conductor-insulator ratio. This type of transistor is also suitable for use in high current applications and high temperature operation.
As with any type of transistor, it is important to take the necessary precautions to ensure that the PMR280UN is not damaged by excessive heat or overvoltage. It is also important to ensure that the gate oxide layer does not become too thin, as this can result in the device being less effective and more prone to breakdown.
The PMR280UN is a versatile transistor, with many advantages over traditional transistors and MOSFETs. It is widely used in a variety of electronic applications, especially those that require low voltage operation, low power loss and high switching speed. With its simple structure, low cost and high reliability, the PMR280UN is an excellent choice for many types of projects.
The specific data is subject to PDF, and the above content is for reference
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