Allicdata Part #: | 568-7437-2-ND |
Manufacturer Part#: |
PMR290XN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 0.97A SOT416 |
More Detail: | N-Channel 20V 970mA (Tc) 530mW (Tc) Surface Mount ... |
DataSheet: | PMR290XN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 530mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 34pF @ 20V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.72nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 970mA (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMR290XN,115 is a type of Field Effect Transistor (FET) which belongs to the single series of metal-oxide semiconductor transistors. It is an enhancement Mode Field Effect Transistor with a drain-source voltage rating of 30V and an on-state drain current rating of 5.6A. It has an integrated fast recovery diode for switching frequencies up to 1.2MHz.
A FET is a class of transistor that can amplify or switch electronic signals and electrical power. The PMR290XN,115 is an enhancement mode FET, meaning it requires power from an external source to be activated. It is used in a wide range of applications, such as in audio amplifiers, motor speed controllers, and power supplies.
The working principle of a FET is based on the electric field principle of semiconductor materials. When voltage is applied between the gate and source terminals, an electric field is created in the semiconductor material. This electric field induces a current in the channel of the FET, which in turn can be used to switch or amplify an electric signal.
The PMR290XN,115 FET is composed of an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). A MOSFET is a switch that works by creating an electric field and allowing the current to flow between the source and the drain terminals. The device is highly efficient and can be used to power high current loads with minimal power loss.
The PMR290XN,115 is ideal for switching applications, power amplifiers, motor control and power supply circuits. It is versatile and can handle high voltages and currents, with very low switching loss. It is also suitable for use in audio amplifiers and is designed for low noise and high performance.
In summary, the PMR290XN,115 is a type of metal-oxide single FET which is used in applications such as audio amplifiers, motor speed controllers, power supplies and power amplifiers. It is composed of a N-channel MOSFET which allows the current to flow between the source and drain terminals. It is highly efficient and can handle high voltages and currents with very low switching loss. The device is ideal for switching, power amplifiers, motor control and power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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