PMR290UNE,115 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	250mW (Ta), 770mW (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	83pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	0.68nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	380 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	700mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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PMR290UNE,115, also known as Field-Effect Transistor (FET) is a type of transistor that relies on an electric field to control the electrical conductivity of a semiconductor material. It belongs to the family of single-gate (SG) transistors. A FET is an active component that can be used in various electronic applications such as amplifying, switching, sensors and audio amplification. This article will discuss the wide application field of this device, as well as its working principle and other related topics.

Application Fields

PMR290UNE,115 is used in a number of different applications due to its low power consumption, high frequency response and low voltage requirement. In particular, it is commonly used in switching applications, as it can switch quickly and accurately. It is also used in data acquisition and control circuits as well as for Radio Frequency Identification (RFID) applications. Additionally, this device is used in audio components and can be used in radio frequency amplifiers, power amplifiers and modulation circuits.

Working Principle

The PMR290UNE,115 is an FET which is composed of three main parts: the gate, the source and the drain. The gate is responsible for controlling the electrical conductivity of the channel between the source and the drain. When a constant or variable voltage is applied to the gate, it creates an electric field that controls the electrical conductivity of the channel, allowing electrons to flow between the source and the drain. In order to ensure that the FET is working properly, the channel must be sufficiently wide. The gate voltage applied to the channel also needs to be at the right level in order for the FET to achieve the desired result. If the gate voltage is too low, the FET will not be able to properly control the electrical conductivity of the channel. On the other hand, if the gate voltage is too high, it could damage the FET.

Benefits and Limitations

One of the primary advantages of using the PMR290UNE,115 is its low power consumption. This type of transistor is designed to have a fast response time and can switch quickly and accurately. Additionally, the FET can be used in audio components and to amplify signals at radio frequencies.Like all other devices, the PMR290UNE,115 has some limitations. In particular, this FET has a relatively low breakdown voltage, which means it is not suitable for high-voltage applications. Furthermore, this type of transistor is sensitive to temperature and may not be suitable for applications where exposure to heat will be a factor. Additionally, PMR290UNE,115 FETs have a relatively high input capacitance, which can affect the performance of certain high-speed applications.

Conclusion

In conclusion, the PMR290UNE,115 is a highly versatile field-effect transistor (FET) that can be used in a wide range of applications. It has a number of benefits including low power consumption, fast response times and high-frequency response. However, there are some limitations to this device, such as its relatively low breakdown voltage and its sensitivity to heat. Despite these limitations, the PMR290UNE,115 remains a popular choice for a wide range of electronic applications.

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