PMT200EPEAX

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The PMT200EPEAX is a type of Field Effect Transistor (FET) and more specifically a Metal-Oxide-Semiconductor FET (MOSFET) that can be used in many applications. In this document, we will take a closer look at the device, including its application areas and the way it works.

Overview

The PMT200EPEAX is a low-voltage N-channel enhancement type MOSFET, with a drain to source breakdown voltage rating of 200V, maximum peak current rating of 2 A, and a maximum gate to source pulsing current rating of 130 mA. It is manufactured using an advanced low-voltage process, making it suitable for applications requiring high-speed switching. The device is available in a variety of packages, including miniature flatpacks, surface mount and through hole packages.

Applications

The PMT200EPEAX is most commonly used as a switch in applications such as power conversion, motor control, lighting, and audio. It has been specifically designed for use in automotive, portable devices, and medical applications that require low on-resistance, low-loss performance, and robustness. Additionally, it is suitable for high-side switching applications due to its large die size, low gate-sourcing capacitance, and low drain-source leakage current. The device is also used in solar power inverters, DC-DC converters, battery management systems, LiDAR systems, and several other applications.

Working Principle

MOSFETs work by utilizing an electric field that is created by the metal-oxide-semiconductor structure. This structure comprises two diffusions (source and drain) that are formed in the substrate of the semiconductor, and a metal gate (one for N-channel devices, three for P-Channel devices) that is separated from the substrate by a thin layer of metal-oxide insulation. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain, creating a conducting path and allowing current to flow between them. As the voltage applied to the gate increases, the conductivity of the MOSFET also increases, allowing for greater current flow.

When a voltage is applied to the source and drain of a MOSFET, it creates a potential gradient, which causes electrons to move from one side to the other, allowing current to flow. However, when the voltage is removed, the electrons no longer have any potential gradient and the MOSFET stops conducting. The PMT200EPEAX can be used in high-side switching applications due to its robustness, low on-resistance, and low drain-source leakage current.

Conclusion

The PMT200EPEAX is a type of N-channel enhancement type MOSFET that has been specifically designed for low-voltage applications. It has a drain to source breakdown voltage rating of 200V, a maximum peak current of 2A, and a maximum gate to source pulsing current of 130mA. It is used in applications such as power conversion, motor control, lighting and audio, and is suitable for automotive and portable device applications, as well as solar power inverters and battery management systems. The working principle of the device relies on the creation of an electric field that is created by the metal-oxide-semiconductor structure, allowing current to flow between the source and drain of the transistor.

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