Allicdata Part #: | 568-10997-2-ND |
Manufacturer Part#: |
PMT21EN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 7.4A SC-73 |
More Detail: | N-Channel 30V 7.4A (Ta) 820mW (Ta), 8.33W (Tc) Sur... |
DataSheet: | PMT21EN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 820mW (Ta), 8.33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 588pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 7.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A PMT21EN/115 is a field effect transistor (FET), which is a type of transistor that changes its behaviour based on the electric fields that pass it. It is an example of a MOSFET (metal oxide semiconductor field effect transistor), which is a type of FET that uses oxide semiconductor materials. In particular, the PMT21EN/115 is a single-gate FET, meaning that it consists of one gate which control the flow of electricity.
The PMT21EN/115 is mainly used in audio circuits, especially high-fidelity applications, as it is well-suited to medium power supplies and features good dynamic performance. It is also used in amplifier circuits and audio mixer circuits. In addition, it can be used as a switch in a circuit as it can be used to stop electrical current flowing when the gate voltage is below a certain level.
The working principle of the PMT21EN/115 is that it uses an electric field to control the current. The electric fields vary according to the voltage difference between the gate and the source of the FET, and the current through the channel increases when this voltage difference is greater.
The current through the channel can be modulated in different ways. For example, the addition of a resistor in parallel between the gate and the source can decrease the voltages reaching the gate, which will result in less current flowing through the channel.
Another way of modulating the current is by using a resistor in series with the gate. This type of resistor is known as a gate resistor and is similar in concept to a voltage divider in that it divides the voltage that is applied to the gate.
The PMT21EN/115 can also be used as a voltage regulator, as the gate acts as a voltage clamp, preventing the voltage from exceeding a certain value. In this way it can be used to maintain a constant supply voltage.
The PMT21EN/115 is a highly versatile device with many applications. As well as its traditional audio applications, it can be used in a wide variety of other applications such as power supply circuits, voltage regulators, switching circuits and amplifiers.
The specific data is subject to PDF, and the above content is for reference
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