PMT200EN,135

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The PMT200EN, 135 is a single and enhancement mode field effect transistor (FET) commonly used in power supply circuitry. It offers high current capacity and high efficiency, and is suitable for use in a variety of applications. In this article, we’ll take a look at the features and applications of the PMT200EN, 135, and also discuss the working principle behind it.

Features of PMT200EN, 135 Field Effect Transistor

The PMT200EN, 135 is a single, enhancement-mode FET. It offers high current capacity, with a maximum continuous drain current of 215 amperes and a peak drain current of 660 amperes. It is rated for operation at a 25°C ambient temperature, and operates at a maximum voltage of 48 volts. In addition, it is highly efficient and features a low turn-on resistance.

The PMT200EN, 135 is also a reliable component with a high temperature range, making it suitable for a variety of applications in which reliability and temperature resistance are important. It also offers a wide range of operating temperatures, with a minimum temperature of -75°C and a maximum temperature of 175°C.

Applications of PMT200EN, 135 Field Effect Transistor

The PMT200EN, 135 is suitable for a variety of applications. It is particularly well-suited for power supply circuitry in industrial systems, due to its high current capacity, high efficiency, and low turn-on resistance. It can also be used in motor control applications, since it offers high temperature stability and efficiency.

The PMT200EN, 135 can also be used in home appliances, automotive systems, lighting systems, and mobile phone systems. In all of these applications, it offers high current capacity, efficient operation, and temperature stability, making it a reliable and safe choice.

Working Principle of PMT200EN, 135 Field Effect Transistor

The PMT200EN, 135 is an enhancement-mode FET. That means that it is normally off, until a voltage is applied to the gate. When this voltage is applied, the channel between the source and drain opens and the current passes through the transistor. This is the basic working principle of the PMT200EN, 135.

To control the current through the transistor, the voltage applied to the gate must be modulated. The amount of current that flows through the transistor is directly proportional to the voltage applied to the gate. The higher the voltage, the more current that flows through the transistor.

The PMT200EN, 135 is a highly efficient FET, making it suitable for a variety of applications in which efficiency is important. It offers high current capacity and temperature stability, making it a reliable and safe choice for a variety of applications.

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