PMT200EPEX Allicdata Electronics
Allicdata Part #:

PMT200EPEX-ND

Manufacturer Part#:

PMT200EPEX

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PMT200EPE/SOT223/SC-73
More Detail: P-Channel 70V 2.4A (Ta) 800mW (Ta) Surface Mount S...
DataSheet: PMT200EPEX datasheetPMT200EPEX Datasheet/PDF
Quantity: 1000
1000 +: $ 0.16011
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SC-73
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 822pF @ 35V
Vgs (Max): ±20V
Series: TrenchMOS™
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 167 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Description

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The PMT200EPEX is an enhancement-mode Power MOSFET transistor which features superior switching performance, high breakdown voltage, and low on-resistance. It is suitable for use in consumer electronics, communication systems, or industrial devices. The PMT200EPEX is capable of handling high electrical current and power, making it an ideal choice for demanding applications requiring high-side switches.

The device is comprised of an active area and a gate structure. The active area is formed by the source and drain P-N junctions, while the gate structure is comprised of an insulated gate and a control terminal. The insulated gate is what enables the conduction of electrical current through the source and drain junctions, and the control terminal is used to control the current level through the device.

The working principle behind the PMT200EPEX is fairly simple. When the gate voltage is positive with respect to the source, it creates a depletion region which prevents the current flow between source and drain. However, when the voltage between source and gate drops below the threshold voltage, the depletion region weakens and current flows from source to drain. As the gate voltage is increased, the current will increase as well, up to a certain limit.

The PMT200EPEX is an excellent choice for a wide range of applications requiring high current or power handling, such as home appliance controls, AC adapters, power supplies, circuit breakers, or motor control systems. It can also be used in switching power supplies, automotive electronics, switch-mode DC-DC converters, or H-bridge circuits. Additionally, due to its low on-resistance and high breakdown voltage, the device is suitable for use in high-side switch applications.

The PMT200EPEX is also capable of controlling high-speed switching applications due to its fast switching times and low capacitance. This makes it suitable for Ethernet switches, LED lighting, LED displays, television disks, or other high-speed data processing applications.

In conclusion, the PMT200EPEX is a reliable and robust transistor which is suitable for a wide range of applications requiring high current or power handling. It features superior switching performance, high breakdown voltage, and low on-resistance, making it an ideal choice for high-side switches, switch-mode DC-DC converters, or H-bridge circuits. Additionally, the device is capable of controlling high-speed switching applications due to its fast switching times and low capacitance, making it suitable for applications such as LED lighting, LED displays, television disks, or other high-speed data processing applications.

The specific data is subject to PDF, and the above content is for reference

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