Allicdata Part #: | PMT200EPEX-ND |
Manufacturer Part#: |
PMT200EPEX |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PMT200EPE/SOT223/SC-73 |
More Detail: | P-Channel 70V 2.4A (Ta) 800mW (Ta) Surface Mount S... |
DataSheet: | PMT200EPEX Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.16011 |
Gate Charge (Qg) (Max) @ Vgs: | 15.9nC @ 10V |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SC-73 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 822pF @ 35V |
Vgs (Max): | ±20V |
Series: | TrenchMOS™ |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 167 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 70V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PMT200EPEX is an enhancement-mode Power MOSFET transistor which features superior switching performance, high breakdown voltage, and low on-resistance. It is suitable for use in consumer electronics, communication systems, or industrial devices. The PMT200EPEX is capable of handling high electrical current and power, making it an ideal choice for demanding applications requiring high-side switches.
The device is comprised of an active area and a gate structure. The active area is formed by the source and drain P-N junctions, while the gate structure is comprised of an insulated gate and a control terminal. The insulated gate is what enables the conduction of electrical current through the source and drain junctions, and the control terminal is used to control the current level through the device.
The working principle behind the PMT200EPEX is fairly simple. When the gate voltage is positive with respect to the source, it creates a depletion region which prevents the current flow between source and drain. However, when the voltage between source and gate drops below the threshold voltage, the depletion region weakens and current flows from source to drain. As the gate voltage is increased, the current will increase as well, up to a certain limit.
The PMT200EPEX is an excellent choice for a wide range of applications requiring high current or power handling, such as home appliance controls, AC adapters, power supplies, circuit breakers, or motor control systems. It can also be used in switching power supplies, automotive electronics, switch-mode DC-DC converters, or H-bridge circuits. Additionally, due to its low on-resistance and high breakdown voltage, the device is suitable for use in high-side switch applications.
The PMT200EPEX is also capable of controlling high-speed switching applications due to its fast switching times and low capacitance. This makes it suitable for Ethernet switches, LED lighting, LED displays, television disks, or other high-speed data processing applications.
In conclusion, the PMT200EPEX is a reliable and robust transistor which is suitable for a wide range of applications requiring high current or power handling. It features superior switching performance, high breakdown voltage, and low on-resistance, making it an ideal choice for high-side switches, switch-mode DC-DC converters, or H-bridge circuits. Additionally, the device is capable of controlling high-speed switching applications due to its fast switching times and low capacitance, making it suitable for applications such as LED lighting, LED displays, television disks, or other high-speed data processing applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PMT200EN,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 100V 1.8A SC-... |
PMT21EN,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 7.4A SC-7... |
PMT29EN,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 6A SC-73N... |
PMT21EN,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 7.4A SC-7... |
PMT200EPEAX | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CHANNEL 70V 2.4A... |
PMT280ENEAX | Nexperia USA... | 0.13 $ | 1000 | MOSFET N-CHANNEL 100V 1.5... |
PMT200EPEX | Nexperia USA... | 0.18 $ | 1000 | PMT200EPE/SOT223/SC-73P-C... |
PMT20RI | Carlo Gavazz... | 136.52 $ | 3 | PHOTO TB REC 20M AC/DC NP... |
PMT20RIT | Carlo Gavazz... | 149.69 $ | 1000 | SEN PHT TB REC 20M AC/DC ... |
PMT20G | Carlo Gavazz... | 173.25 $ | 1000 | SEN PHT TB TRANS 20M AC/D... |
PMT20RG | Carlo Gavazz... | 180.18 $ | 1000 | SEN PHT TB REC 20M AC/DC |
PMT20I | Carlo Gavazz... | 72.07 $ | 1000 | PHOTO TB TRANS 20M AC/DC ... |
PMT20IM | Carlo Gavazz... | 82.47 $ | 1000 | PHOTO TE PL W/MUTE INPUT |
PMT20RIM | Carlo Gavazz... | 125.78 $ | 1000 | PHOTO TR PL MUTE 20M SPDT |
PMT20RGT | Carlo Gavazz... | 249.48 $ | 1000 | SEN PHT TB REC 20M AC/DC |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...