Allicdata Part #: | PTFC210202FC-V1-R250-ND |
Manufacturer Part#: |
PTFC210202FC-V1-R250 |
Price: | $ 28.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS (Dual) 28V 170mA 2.2GHz 21dB 5W H-... |
DataSheet: | PTFC210202FC-V1-R250 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 25.80940 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.2GHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 170mA |
Power - Output: | 5W |
Voltage - Rated: | 65V |
Package / Case: | H-37248-4 |
Supplier Device Package: | H-37248-4 |
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The PTFC210202FC-V1-R250 is a type of field effect transistor (FET), specifically a radio frequency (RF) FET. This type of FET is commonly used in RF applications such as radio transmitters and receivers, and in other electronic devices with radio frequency signals. As a FET, it is basically a type of switch, using voltage to control the current flowing through the device. The PTFC210202FC-V1-R250, in particular, is a part of Themacore\'s Power transFET (PTF) series. It has an operating temperature range of -55°C to 150°C, a maximum drain current of 0.07A, and a maximum drain-source voltage of 1.25V. The FET also has a very low input capacitance (5.5 pF) and a very low junction capacitance (5.5 pF).
The primary application of the PTFC210202FC-V1-R250 is in RF transmitter and receiver circuits. It is used to switch signals in the RF frequency range in order to control the transmission and reception of data. It is also used in radio-frequency identification (RFID) tags and other security applications where RF signals are used to detect and authorize access. Additionally, the FET is often used as an amplifier, as the voltage-controlled current can be used to increase the amplitude of a signal.
To understand the working principle of the PTFC210202FC-V1-R250, it is important to understand the basic operation of an FET. A FET is basically a voltage-controlled switch, consisting of a source, drain, and gate. When a voltage is applied to the gate, it creates an electric field across the device, which in turn controls the current flow between the source and drain. This voltage-controlled current is the basis of the FET\'s operation, and it is what makes it useful in RF applications. The PTFC210202FC-V1-R250, in particular, has a very low input capacitance, which makes it more efficient at controlling the current flow and more suitable for applications with higher frequency signals.
In summary, the PTFC210202FC-V1-R250 is an RF FET designed to switch and amplify signals in the RF frequency range. It is commonly used in RF transmitter and receiver circuits, RFID tags, and other security applications. Its low input capacitance makes it particularly suitable for higher frequency applications.
The specific data is subject to PDF, and the above content is for reference
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