| Allicdata Part #: | PTFC261402FC-V1-ND |
| Manufacturer Part#: |
PTFC261402FC-V1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Cree/Wolfspeed |
| Short Description: | IC AMP RF LDMOS |
| More Detail: | RF Mosfet LDMOS 28V 900mA 2.69GHz 18dB 28W |
| DataSheet: |  PTFC261402FC-V1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | LDMOS |
| Frequency: | 2.69GHz |
| Gain: | 18dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 900mA |
| Power - Output: | 28W |
| Voltage - Rated: | 65V |
| Package / Case: | -- |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PTFC261402FC-V1 devices belong to the family of wall-plug Transistors called Field Effect Transistors (FETs), which are specifically designed to amplify or switch Electronic signals. FETs are one type of MOSFETs, of which the name stands for Metal Oxide Semiconductor Field Effect Transistor. This particular device can be categorized as a Radio Frequency (RF) MOSFET due to its capability of operation in extremely high frequency ranges, which is the spectrum of airwaves used for communication and data transmission.The RF MOSFETs are widely used in a variety of communication applications in order to achieve higher levels of performance and efficiency. The PTFC261402FC-V1 device is a great example of this as it features a wide range of useful characteristics. The device’s body is constructed from a low-thermal-resistance epoxy packaging to ensure enhanced heat dissipation when in use. Its excellent build quality makes it highly suitable for the harsh RF environment and its low gate capacitance helps to significantly decrease power consumption.The various applications where the PTFC261402FC-V1 can be used include cell phones and other fixed wireless equipment, as well as wireless radio receivers and transmitters, telecommunications, automotive electronics and medical equipment. It has a broad listed frequency range of 3.2 to 6.5 GHz, making it suitable for a range of applications. The device’s Maximum Power Dissipation (MPD) is 9 W and its Drain Efficiency (DE) is 55.6 %.The working principle of the PTFC261402FC-V1 device is based upon the fact that the voltage of a biasing network will determine the FET’s width of resistance. This means that when a positive voltage is applied to the gate then the p-type channel in the device will be ‘open’ allowing current to flow between the drain and the source. The width of the channel is dependent on the amount of bias voltage. When the gate is un-biased then the channel is ‘closed’ and no current will flow. This type of switching or impedance of the FET is used in a variety of RF radio frequency applications, especially in communication and data transmission.To conclude, the PTFC261402FC-V1 device is a Radio Frequency Field Effect Transistor which can be utilized as a standard switch or amplifier in various applications. With a wide range of listed frequencies available, it is highly efficient and resilient to harsh conditions. The device is is constructed from low-thermal-resistance materials ensuring enhanced heat dissipation and its low gate capacitance further reduces power usage. The device’s working principle lies in its ability to switch the p-type channel from open to closed depending on the bias voltage to control the amount of current flow.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "PTFC" Included word is 19
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PTFC270051M-V2-R1K | Cree/Wolfspe... | 5.89 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTFC270101M-V1-R1K | Cree/Wolfspe... | 7.29 $ | 1000 | RFP-LD10MRF Mosfet LDMOS ... |
| PTFC210202FC-V1-R250 | Cree/Wolfspe... | 28.39 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC260202FC-V1-R250 | Cree/Wolfspe... | 31.71 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC210202FC-V1-R0 | Cree/Wolfspe... | 34.15 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
| PTFC260202FC-V1-R0 | Cree/Wolfspe... | 38.14 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
| PTFC261402FC-V1-R250 | Cree/Wolfspe... | 49.4 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC261402FC-V1-R0 | Cree/Wolfspe... | 59.44 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
| PTFC262157FH-V1-R250 | Cree/Wolfspe... | 72.25 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTFC262157SH-V1-R250 | Cree/Wolfspe... | 72.25 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTFC262157FH-V1-R0 | Cree/Wolfspe... | 86.92 $ | 1000 | RF MOSFET TRANSISTORSRF M... |
| PTFC262808FV-V1-R250 | Cree/Wolfspe... | 88.88 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTFC262808SVV1R250XTMA1 | Infineon Tec... | 92.44 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTFC262808FV-V1-R0 | Cree/Wolfspe... | 103.1 $ | 1000 | RF MOSFET TRANSISTORSRF M... |
| PTFC262808FV-V1 | Cree/Wolfspe... | 113.76 $ | 1000 | RF MOSFET TRANSISTORSRF M... |
| PTFC210202FCV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC260202FC-V1 | Cree/Wolfspe... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC261402FC-V1 | Cree/Wolfspe... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet ... |
| PTFC262808SVV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOS H-37275G-... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...