Allicdata Part #: | PTFC261402FC-V1-R250-ND |
Manufacturer Part#: |
PTFC261402FC-V1-R250 |
Price: | $ 49.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.69GHz 18dB 28W |
DataSheet: | PTFC261402FC-V1-R250 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 44.90910 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.69GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | -- |
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The PTFC261402FC-V1-R250 is a high performance MOSFET, otherwise known as a metal–oxide–semiconductor field-effect transistor. It is considered a power transistor and is found in commercial, industrial, and military applications, making it an ideal choice for wireless communications and RF applications. These devices combine excellent temperature behavior with high power and low gate-source threshold voltage, allowing for reliable operation under a wide range of conditions. A key benefit of the PTFC261402FC-V1-R250 is its high RF conversion gain, which makes the device especially suitable for automotive and avionics applications.
The MOSFET works by utilizing the principle of capacitive electrostatics. This occurs by depositing a layer of metal or other material onto a semiconductor substrate, which then forms a gate. As an electrical signal is sent to the gate, it in turn affects the electron flow of the substrate, forming an injected electric field. This electric field then controls the amount of current that flows through the device. This makes the MOSFET a switch, allowing the user to control the flow of current through the device.
The PTFC261402FC-V1-R250 has a number of features that make it especially suited for RF applications. It has a high RF conversion gain and excellent temperature behaviour. This means that it is able to switch efficiently between low- and high-frequency signals, making it ideal for use in systems that require multiple frequencies of operation. Additionally, it has a low gate threshold voltage, allowing for reliable operation in a range of conditions. Finally, it has a low output capacitance, which minimizes unwanted signal delay and ensures that signals remain stable.
The PTFC261402FC-V1-R250 is a versatile MOSFET, capable of being easily integrated into a wide range of systems. Its excellent temperature behaviour and low voltage capability make it an ideal choice for wireless and RF applications, such as mobile phone antennas and satellite communications. Its high RF conversion gain also makes it ideal for automotive and avionics applications, allowing for reliable and efficient operation under a wide range of conditions.
The specific data is subject to PDF, and the above content is for reference
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