PTFC262808FV-V1-R250

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PTFC262808FV-V1-R250 is a silicon-based MOSFET transistor with special applications in radio frequency (RF) power amplifiers and microwave systems. Engineered as an acquirer of electrical current, the transistor uses a temperature-stable gate controlled device to amplify and convert a low-power radio-frequency signal into a higher power transmission.

The PTFC262808FV-V1-R250 is primarily an enhancement mode lateral N-channel MOSFET with an ultra low gate charge and low on-resistance. This heatsink-mountable device has 15V drain source voltage and 160V breakdown voltage, with a 250-watt maximum operating temperature. Additionally, it’s built with a low gate-source capacitance and low profile copper-plate leadframe.

This RF transistor is available in a solderable power package that suits the requirements of multiple applications, including audio, industrial the microwave frequency, television, and satellite. With a superb gate switch endurance and a low leaky gate-channel junction, this device ensures consistent performance for extended period of time.

Working principle

Since this MOSFET transistor is an enhancement mode device, it works by using an applied voltage to lower the threshold voltage (V_th) of the transistor. This change in threshold voltage modulates the current path by increasing or decreasing the volume of electrons and holes in the oxide layer of the transistor. In other words, when the MOSFET operates in its active state, the gate voltage takes control of the voltage and current of the semiconductor.

This makes it ideal for use in RF systems, as it allows the drive of high switching or current. When the gate voltage is applied, the RF MOSFET conducts current from the source pin (S) to the drain pin (D). This also helps reduce harmonic distortion in the output signal of the device, resulting in a cleaner transmission.

Application Field

The PTFC262808FV-V1-R250 is widely used for in devices that require precision performance and high-power transmission, such as power amplifiers and microwave systems. It is most conveniently used when the application requires reliable devices with improved amplification and noise immunity. Thanks to its excellent power handling capabilities, it can be used in Class-AB and Class-C power amplifiers, as well as in applications that require linear performance with low distortions.

Its exceptional thermal capabilities make it a preferred choice for applications such as radio telemetry, radio beacons, and satellite receivers. Additionally, it has been used in RF remote-control equipment, cable systems, base station amplifiers, terrestrial television transmitters, marine and military communications and industrial process control, among others.These high-power transistors are also used in high-power, low-distortion audio systems and switch-mode power circuits.

The specific data is subject to PDF, and the above content is for reference