PTFC262808FV-V1

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The PTFC262808FV-V1 is an active semiconductor device used to amplify and switch electrical signals. It can be classified under the Transistors - FETs, MOSFETs - RF category. The PTFC262808FV-V1 is a standard non-volatile dual-poled Field Effect Transistor (FET) suitable for RF applications, featuring high-density cell structures that provide low-on-resistance, high gain and improved thermal performance.

The main principle of operation of a FET is to use an electric field to control the conductivity of a channel between two sources of charge. This control is modulated by altering the electric field and in turn altering the conductivity, allowing the FET to act as a switch or an amplifying device. The electric field can be changed by the gate voltage, which is the voltage applied between the gate and source of the FET.

PTFC262808FV-V1 has a wide range of potential applications. It is ideal for use in power switching circuits, amplifier circuits, gate drive circuits, RF amplifiers, low-noise amplifiers, and voltage-controlled oscillators. It is also suitable for use in high-voltage and high-current systems, including motor control applications. With its high-density cell structures, it is capable of providing low channel resistance, high gain, and improved thermal performance.

The PTFC262808FV-V1 features a small footprint, low rDSon, low circuit noise, and high input impedance. The device has a maximum voltage rating of 24V and can handle up to a maximum of 6A continuous current. It also has a breakdown voltage rating of 26.5V and can handle up to a maximum of 8A peak current. The device has a rising and falling slew rate of 5.05V/µ sec and an operating temperature range of -55 to +175℃.

PTFC262808FV-V1 FETs are available in various packages such as SOT23-5, SOT23-6, SOT23-8, and SOT23-RA. The packages feature built-in heat sinks and have an RDSon ranging from 0.07 Ω to 2.0 Ω. The superficial gold plating provides better thermal management and higher reliability. The device is RoHS compliant and has Pb-free terminals.

In summary, the PTFC262808FV-V1 is a standard non-volatile dual-poled FET suitable for RF applications. With its wide range of potential applications, small footprint, and high input impedance, it is suitable for use in power switching circuits, amplifier circuits, gate drive circuits, RF amplifiers, low-noise amplifiers, and voltage-controlled oscillators. The device is available in various packages and has built-in heat sinks and superficial gold plating for better thermal management and higher reliability. It is RoHS compliant and has Pb-free terminals.

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