PTFC262808SVV1R250XTMA1

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Part Status:	Last Time Buy

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PTFC262808SVV1R250XTMA1 Application Field and Working Principle

The PTFC262808SVV1R250XTMA1 is a robust and compact single-gate field-effect transistor (FET) designed for use in radio frequency (RF) applications. The device is designed to be used in applications where high performance, low input capacitance and low on-state resistance are all important, such as high-frequency mixers, oscillators, amplifiers, and receivers, as well as high-speed transmitters. The PTFC262808SVV1R250XTMA1 is a silicon-on-insulator (SOI) MOSFET (metal-oxide-semiconductor field-effect transistor). This type of FET is constructed using a thin layer of silicon particles embedded in an insulating material, and is designed to offer superior performance characteristics when compared to traditional FETs. This type of FET is described as “robust” due to its low power consumption, high input capacitance, and low on-state resistance. One key feature of the PTFC262808SVV1R250XTMA1 is its low on-state resistance. This value is an important characteristic in any transistor and is indicative of the amount of current that needs to be drawn in order to activate the transistor (turn on). The lower the resistance, the less current is needed and thus, the better the device performance. The PTFC262808SVV1R250XTMA1 has an on-state resistance value of 1.25 ohms, which is extremely low for a device of this type. The second notable feature of the PTFC262808SVV1R250XTMA1 is its low gate capacitance. This value is an indication of the device’s ability to pass signals at high frequencies. Low gate capacitance of the device enables it to pass high frequency signals with minimal loss. The third key feature of the PTFC262808SVV1R250XTMA1 is its bias voltage range. This value is important in determining the range of the device’s working parameters, including the threshold voltage, power dissipation, and on-state resistance. The device has a bias voltage range of -12V to +12V, which is wide enough to enable the device to be used in a variety of applications, including RF mixers, amplifiers and oscillators. The last key feature of the PTFC262808SVV1R250XTMA1 is its thermal stability. In order to maintain the device’s performance in a variety of environments, it is important that the device be able to withstand both high and low temperatures. The PTFC262808SVV1R250XTMA1 has an operating temperature range of -30C to +125C, which is sufficient for use in a wide range of RF applications. The PTFC262808SVV1R250XTMA1 is well suited for use in RF applications due to its robust performance characteristics. It has a low on-state resistance, low gate capacitance, wide bias voltage range, and excellent thermal stability. This combination of features makes the PTFC262808SVV1R250XTMA1 an ideal choice for high frequency mixers, oscillators, amplifiers, and receivers. Additionally, due to its low power consumption, the device is well suited for use in high-speed transmitters, where efficiency is important.

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