Allicdata Part #: | PUMH9,125-ND |
Manufacturer Part#: |
PUMH9,125 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN PREBIAS 0.3W 6TSSOP |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | PUMH9,125 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03788 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Base Part Number: | P*MH9 |
Supplier Device Package: | 6-TSSOP |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors are an essential component for any application that requires electrical switches or amplifiers. The PUMH9,125 is a special type of transistor - a bipolar array, pre-biased. This means that, when installed, it is already half-on, allowing for switching with very small energy expenditure.
PUMH9,125 construction and features
The PUMH9,125 is a type of transistor, specifically a bipolar array, pre-biased. This means that the array is configured such that, when installed and connected, two out of four transistors are pre-biased towards the \“on\” state. Like all transistors, it comprises of three terminals, the base, collector and emitter. The purpose of the PUMH9,125 is to take advantage of the fast switching capabilities of the pre-biased transistors which creates an extremely efficient use of energy.
The PUMH9,125 has been designed with a variety of features which help to maximise efficiency and minimise power consumption. These features include a low on-resistance, a wide operating temperature range, and a low gate current threshold. In addition, the transistors included in the array are insulated gate field effect transistors (IGFET), meaning they require no additional components to supply a bias current.
PUMH9,125 application field and working principle
The PUMH9,125 is primarily used in applications that require switching between two or more states quickly and efficiently. It is designed for use in applications such as power amplifiers, motor speed controllers, lighting and alarm systems. The transistors included in the array provide fast switching capabilities, which allow for the timely execution of simple and complex tasks. Furthermore, the low power consumption of the transistors adds to the overall efficiency of these systems.
The PUMH9,125 is designed with a pre-biased configuration, meaning that two of the four transistors are already at half the required voltage. This is advantageous as it eliminates the need for a separate power supply and simplifies the overall circuit design. When combined with a power supply of the appropriate voltage, the transistors within the PUMH9,125 can quickly and efficiently switch between two states, providing the user with an efficient, reliable and cost-effective solution.
The PUMH9,125 is an innovative type of transistor which is capable of providing fast and efficient switching capabilities with reduced power consumption. Its pre-biased design allows the user to save time and money when designing the circuit, while still delivering reliable and accurate results. The PUMH9,125 is the perfect solution for applications that require a reliable, efficient and cost-effective switching mechanism.
The specific data is subject to PDF, and the above content is for reference
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