PUMH11F Allicdata Electronics
Allicdata Part #:

PUMH11F-ND

Manufacturer Part#:

PUMH11F

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W SC-88
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PUMH11F datasheetPUMH11F Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02800
Stock 1000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: MH11
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PUMH11F is a transistor array product from NEC that is used to improve circuit performance and simplify the design of circuits. It is a pre-biased device, which means it is already tailored to meet the requirements of the circuit design. The PUMH11F is a bipolar junction transistor array product that is made up of two distinct transistors. The first is an npn transistor and the second is a pnp transistor. The two emitters, collectors and bases of the transistors are interconnected, forming a pin configuration of 11 pins.

The PUMH11F is primarily used in applications that require both an npn and pnp transistor. This transistor array can provide bridges between both low and high voltage levels. Additionally, it can also be used in circuit designs that need to convert one type of signal into two separate types of signals. This can be especially useful for applications that involve multiple control points or multiple feedback control loops.

The working principle of the PUMH11F is fairly simple. When a current is applied to the base of the device, it serves to forward bias the two transistors. This results in increased conduction from the transistor junction. The two transistors can be used independently or their outputs can be combined, depending on the application and circuit design.

The main advantage of the PUMH11F transistor array is its compact size. This makes it an ideal choice for circuit designs where space is a concern. Additionally, its pre-biased design reduces the number of components necessary to make the circuit work, which can reduce manufacturing costs. The PUMH11F can also be used as a voltage regulator and is often used in radio frequency applications.

In summary, the PUMH11F is a transistor array product from NEC that is used to improve circuit performance and simplify the design of circuits. It is a pre-biased device, which means it is already tailored to meet the requirements of the circuit design and can provide bridges between both low and high voltage levels. The working principle of the PUMH11F relies on applying a current to the base of the device to forward bias the two transistors, allowing them to be used independently or combined based on the application and circuit design. Its significant advantages include its compact size and its ability to reduce the number of components necessary to make the circuit work, which in turn can reduce manufacturing costs.

The specific data is subject to PDF, and the above content is for reference

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