PUMH4,115 Discrete Semiconductor Products

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The PUMH4,115 is a pre-biased array of bipolar junction transistors (BJTs), a type of transistor which is used in a wide range of applications. The pre-bias of these transistors allows them to operate at a voltage of 4-15V and provides them with a higher breakdown voltage than regular transistors.

A BJT is composed of two pn-junctions, connected together at their peaks. This forms a three-terminal device, with one connection to the input, one to the base, and one to the output. The input signal can be modulated by current flowing through the base, which makes these transistors an ideal choice for amplification and switching applications.

The PUMH4,115 uses a base-emitter junction that is pre-biased using a resistive divider. This allows the BJT to operate at 4-15V without overstressing the device, and to provide protection against voltage spikes that could cause a rapid current flow. The pre-bias also improves performance by providing greater turn on and turn off speeds.

The PUMH4,115 has a number of other features that make it well suited for use in a variety of applications. The widevoltage capabilities allow for a wide range of power levels, while the high breakdown voltage can provide increased protection in sensitive applications. The pre-bias also provides a higher forward voltage drop than regular BJTs, making them very efficient in converting current to voltage.

The PUMH4,115 is well suited for use in switching and amplifier applications due to its high speed and low power dissipation capabilities. The wide voltage range allows the device to be used in a variety of conditions, making it an ideal choice for a wide range of applications. The pre-bias also provides increased protection against reverse currents, reducing the chance of damage due to excess power.

The PUMH4,115 is a reliable and efficient pre-biased array of bipolar junction transistors, making them a popular choice for applications where low power, high speed, and accuracy are required. The wide voltage range and high breakdown voltage provide greater protection than regular transistors, while the pre-bias allows for more efficient operations. The device is ideal for a wide range of switching and amplifier applications and is capable of providing reliable performance in a range of conditions.

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