PUMH10,125 Allicdata Electronics
Allicdata Part #:

PUMH10,125-ND

Manufacturer Part#:

PUMH10,125

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PUMH10,125 datasheetPUMH10,125 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03788
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Base Part Number: P*MH10
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The PUMH10,125 is a type of pre-biased bipolar junction transistor array that is used in many applications. This type of transistor array is also known as a BASJET, or Bipolar Array with Selective Junction Enhancement Technology.

Applications

The PUMH10,125 is commonly used in applications where high accuracy, low noise, and low power are required. These include power management, data acquisition, and signal processing. It is also used in applications where space or size limitations are an issue such as in cell phones, portable electronics, and automotive electronics.

The PUMH10,125 is designed to be used in high frequency oscillators, phase locked loops, and other types of circuits where control and detection of signals is essential. It is also well suited for low power applications such as sensors and low power digital signal processing.

Because of its low power consumption, the PUMH10,125 is also well suited for medical applications, medical imaging, body temperature monitoring, and other similar applications.

Working Principle

The PUMH10,125 works by providing high-performance signal propagation and power management. The device contains a pre-biased array of BJTs that are connected in parallel. This allows for greater signal control and improved signal integrity.

The PUMH10,125 also has an on-chip voltage regulator, which provides a reference voltage for the transistor array. The voltage regulator also ensures that the device can operate reliably in a wide range of temperatures, from -40°C to 125°C.

The device also has a high-frequency implementation logic (HIL) circuit, which allows for low-voltage operation and improved signal performance. This is accomplished by using two additional BJTs for voltage compensation.

The PUMH10,125 also has a built-in temperature compensation circuit that is able to maintain the device\'s accuracy at all temperatures. This ensures that the device can perform consistently throughout its operating range.

Conclusion

In summary, the PUMH10,125 is an excellent choice for applications requiring high accuracy, low noise, and low power. It is well suited for high frequency oscillators, phase locked loops, and other types of circuits where control and detection of signals is essential. It is also suitable for low power applications such as sensors and low power digital signal processing. The device is designed to be robust and reliable, with a built-in temperature compensation circuit and a high-frequency implementation logic circuit.

The specific data is subject to PDF, and the above content is for reference

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