PUMH16,115 Allicdata Electronics

PUMH16,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1740-2-ND

Manufacturer Part#:

PUMH16,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PUMH16,115 datasheetPUMH16,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03969
6000 +: $ 0.03451
15000 +: $ 0.02933
30000 +: $ 0.02761
75000 +: $ 0.02589
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Description

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A PUMH16,115 is a type of Bipolar Junction Transistor (BJT) array. It is a pre-biased, monolithic device made up of four matched NPN transistors. The devices offer higher gain, low noise characteristics, and fast switching. The four transistors are individually configurable and can be used in various functons.

Application Field

The PUMH16,115 is designed for use in applications where high performance and small size are required. The device is compatible for use in many communication and computer systems, as well as in automotive, consumer, industrial, and telecom applications such as radio frequency (RF) equipment. It is also used in analog and digital circuits, such as video amplifiers, pulse transformers, and power supplies. It can also be used in low-noise amplifiers, switching regulators, and other power management applications.

Working Principle

The PUMH16,115 is made up of four NPN transistors configured in a non-inverting configuration. This configuration allows for a higher gain than most BJT arrays. Each transistor contains three electrodes, the Base (B), the Collector (C), and the Emitter (E). The Base is used to control the current flowing between the Collector and Emitter, while the Collector and Emitter are current carriers. The Emitter also provides the electrical balance between the two junctions, which allows for a desirable type of operation. By controlling the current flow between the Base and the Collectors, it is possible for the PUMH16,115 to be used in multiple applications.

The PUMH16,115’s pre-biased configuration allows it to draw constant current, ensuring reliable operation over a wide range of temperature and load conditions. For best performance, it is recommended to use a heat sink with the PUMH16,115. The device offers fast switching and high gain at low frequencies, making it ideal for applications requiring a wide range of frequency response. In addition, the PUMH16,115 has low noise, good signal-to-noise ratios, and high input impedance.

Conclusion

The PUMH16,115 is a pre-biased Bipolar Junction Transistor Array designed for a variety of analog and digital circuits. The four matched transistors provide the device with high performance, low noise, and fast switching capabilities at a relatively small size. The device is suitable for use in applications such as communication and computer systems, automotive, consumer, industrial, and telecom applications such as radio frequency equipment. By controlling the current flow between the Base and the Collectors, the PUMH16,115 is able to be used in multiple applications. As with any BJT array, it is recommended to use a heat sink with the PUMH16,115 for best performance.

The specific data is subject to PDF, and the above content is for reference

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