Allicdata Part #: | R6011ENX-ND |
Manufacturer Part#: |
R6011ENX |
Price: | $ 2.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 11A TO220 |
More Detail: | N-Channel 600V 11A (Tc) 40W (Tc) Through Hole TO-2... |
DataSheet: | R6011ENX Datasheet/PDF |
Quantity: | 221 |
1 +: | $ 2.13570 |
10 +: | $ 1.92717 |
100 +: | $ 1.54860 |
500 +: | $ 1.20448 |
1000 +: | $ 0.99800 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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R6011ENX is a series of MOSFETs developed by ROHM Semiconductor and Texas Instruments. It is a single-package MOSFETs that excels in both low power consumption and high-speed operation. It is a single-package FETs manufactured using advanced CMOS technology by TSMC and adopted by ROHM. The chip is built using an innovative micro device process, making it both reliable and efficient.
Application Field
R6011ENX is widely used in applications such as general-purpose switching, drive control, and DC/DC converters. It is also highly tolerant to overshoot and undershoot conditions and works perfectly in high-voltage environments. Furthermore, it features reliability in low-temperature and high-voltage operation. It is often used in automotive and industrial applications where reliability and efficiency are paramount.
Working Principle
R6011ENX is a metal-oxide semiconductor field-effect transistor (MOSFET) which uses a gate voltage to control a channel between the source and the drain. The operation of the R6011ENX is based on the metal-oxide-semiconductor (MOS) structure. It employs a thin layer of oxide (the gate oxide) on a silicon substrate. An electric field is applied through the oxide layer to the channel formed between source and drain, controlling the current flow through it.
The R6011ENX is specifically designed to achieve high-speed switching. It features a low on-resistance, fast switching capability and low gate charge. Additionally, it features low-drain-to-source capacitance, making it very efficient for high-frequency applications. Moreover, it can operate at low gate voltages, making it more suitable for low voltage applications.
In addition, R6011ENX features an excellent thermally conductive heat transfer path, ensuring optimal heat dissipation and reducing thermal stress. This helps to minimize the total power dissipation and to prevent thermal runaway in the chip, thus enhancing its reliability.
The R6011ENX is a single-package FETs manufactured using advanced CMOS technology and employed in different commercial and industrial applications. With its excellent performance characteristics, like low power consumption and high-speed operation, it is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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