R6015ENJTL Discrete Semiconductor Products

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The R6015ENJTL is a field-effect power transistor that has been designed and engineered to provide reliable service in various applications. It is designed and built to provide superior performance in a wide range of applications, including high-frequency switching and power amplification. Specifically, the R6015ENJTL is designed and engineered to provide robust and dependable performance in power supplies, AC-DC converters, and motor control systems, among other applications.

The R6015ENJTL is categorized as a single-field-effect power transistor (FET). FETs are a type of semiconductor field-effect device whose operation is based upon the "field-effect" principle, where the output of the device is determined by an electric field induced by its input. FETs can come in both N-channel, which conduct electrons (the negative carriers in a semiconductor) as their main charge carriers, and P-channel, which conduct holes (the positive carriers in a semiconductor) as their main charge carriers. The R6015ENJTL is an N-channel device.

The R6015ENJTL is rated to serve as a power switch of up to 17 A and 25 V. Its maximum power dissipation rating is the sum of the voltage rating and the current rating: 42 W. The R6015ENJTL has an on-resistance rating of 13.2 mΩ at a Vds of 12 V and Ids of 1 A. It has a gate charge (Qg) of 2.25nC. All of these characteristics combine to make the R6015ENJTL uniquely suited to serve as a power switch and power amplifier in applications such as AC-DC switching power supplies and motor control.

The operation of the R6015ENJTL is based upon the field-effect principle. When a positive voltage is applied to the gate terminal of the FET, a voltage difference, known as the gate-to-source voltage (Vgs), is created between the gate and source terminals of the FET. This voltage difference causes an electric field to be generated in the channel region between the gate and the source, and this electric field causes the channel region to become conducting. The conducting channel is responsible for the device being able to transfer charge between the source and drain terminals. As the Vgs is varied, so, too, is the resistance of the channel, which in turn affects the current flowing through the device.

Because the channel is electrically charged by the voltage difference between the gate and the source, this device is also known as a "depletion-mode" FET or DMFET. This is because when a voltage is applied to the gate, the charge carriers (electrons in this case) in the channel region become depleted. As the voltage is increased further, the depletion of charge carriers increases, resulting in a decrease in the resistance of the channel and an increase in the current flowing through the device. Conversely, when the gate voltage is reduced, the charge carriers become less depleted, resulting in an increase in the resistance of the channel and a decrease in the current flowing through the device.

The R6015ENJTL is a popular choice for applications such as AC-DC switching power supplies and motor control systems due to its robust performance, low on-resistance rating, low gate charge, and wide voltage and current ratings. By using this FET, engineers can rely on reliable and dependable performance in their designs.

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