Allicdata Part #: | R6015ANX-ND |
Manufacturer Part#: |
R6015ANX |
Price: | $ 4.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 15A TO-220FM |
More Detail: | N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | R6015ANX Datasheet/PDF |
Quantity: | 341 |
1 +: | $ 3.93750 |
10 +: | $ 3.51414 |
100 +: | $ 2.88137 |
500 +: | $ 2.33318 |
1000 +: | $ 1.96774 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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R6015ANX is a single metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Richtek Technology Corporation. It has a drain-to-source current of 4A, maximum gate-to-source voltage of 25V and maximum drain-to-source voltage of 60V. It is also RoHS-compliant. The device is available in SOT23-6 and SOT89 packages, making it suitable for a wide range of applications.
Application
The R6015ANX is typically used in DC-DC converters, load switches, power management systems and other high-current, low-voltage applications. It can be used as a power switch in electronic equipment with a maximum power rating of 60W and a maximum load current of 4A. It can also be used in portable electronics devices such as mobile phones and digital cameras, as well as in automotive applications.
Working Principle
The working principle of a MOSFET is based on the ability of the channel material between the drain and source to amplify a small input signal. When a positive voltage is applied to the gate of the device, a small amount of charge is induced in the channel material and creates a conductive pathway between the drain and source terminals. As the voltage is increased, the conductive pathway increases in current and resistance between the drain and source, allowing the device to act as a switch.
In addition, the output voltage is determined by the voltage across the drain and source terminals. As the gate voltage is increased, the voltage across the drain and source is also increased. This in effect affects the output current level.
Finally, the R6015ANX also has a low on-resistance. This means that when the gate voltage is increased, the output current is also increased, allowing for a more efficient operation.
Overall, the R6015ANX is a versatile single MOSFET suitable for a wide range of high-current, low-voltage applications. It has a low on-resistance and can operate at a maximum power rating of 60W and a maximum load current of 4A. Moreover, it is RoHS-compliant and is available in SOT23-6 and SOT89 packages.
The specific data is subject to PDF, and the above content is for reference
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