R6015ANX Allicdata Electronics
Allicdata Part #:

R6015ANX-ND

Manufacturer Part#:

R6015ANX

Price: $ 4.33
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 15A TO-220FM
More Detail: N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-2...
DataSheet: R6015ANX datasheetR6015ANX Datasheet/PDF
Quantity: 341
1 +: $ 4.33000
10 +: $ 4.20010
100 +: $ 4.11350
1000 +: $ 4.02690
10000 +: $ 3.89700
Stock 341Can Ship Immediately
$ 4.33
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Bulk 
Description

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R6015ANX is a single metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Richtek Technology Corporation. It has a drain-to-source current of 4A, maximum gate-to-source voltage of 25V and maximum drain-to-source voltage of 60V. It is also RoHS-compliant. The device is available in SOT23-6 and SOT89 packages, making it suitable for a wide range of applications.

Application

The R6015ANX is typically used in DC-DC converters, load switches, power management systems and other high-current, low-voltage applications. It can be used as a power switch in electronic equipment with a maximum power rating of 60W and a maximum load current of 4A. It can also be used in portable electronics devices such as mobile phones and digital cameras, as well as in automotive applications.

Working Principle

The working principle of a MOSFET is based on the ability of the channel material between the drain and source to amplify a small input signal. When a positive voltage is applied to the gate of the device, a small amount of charge is induced in the channel material and creates a conductive pathway between the drain and source terminals. As the voltage is increased, the conductive pathway increases in current and resistance between the drain and source, allowing the device to act as a switch.

In addition, the output voltage is determined by the voltage across the drain and source terminals. As the gate voltage is increased, the voltage across the drain and source is also increased. This in effect affects the output current level.

Finally, the R6015ANX also has a low on-resistance. This means that when the gate voltage is increased, the output current is also increased, allowing for a more efficient operation.

Overall, the R6015ANX is a versatile single MOSFET suitable for a wide range of high-current, low-voltage applications. It has a low on-resistance and can operate at a maximum power rating of 60W and a maximum load current of 4A. Moreover, it is RoHS-compliant and is available in SOT23-6 and SOT89 packages.

The specific data is subject to PDF, and the above content is for reference

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