Allicdata Part #: | R6015ANJTL-ND |
Manufacturer Part#: |
R6015ANJTL |
Price: | $ 2.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE LPTS |
More Detail: | N-Channel 600V 15A (Tc) 100W (Tc) Surface Mount LP... |
DataSheet: | R6015ANJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.81560 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The R6015ANJTL is a N-channel MOSFET developed by Renesas semiconductor. This transistor is capable of very high speed switching and has a low on-state resistance that enables maximum power output. Its features make this transistor ideal for a variety of applications including automated control systems, voltage converters, and power amplifiers. In this article, we will discuss the application field and working principle of the R6015ANJTL.
The R6015ANJTL is classified as a logic-level MOSFET. This means it is designed to be driven by low voltage logic levels such as 5V and 3.3V. It also has a low on-state resistance due to its optimized structure. This low on-state resistance provides maximum power output and is ideal for high speed switching.
The R6015ANJTL can be used in a variety of applications. It is a great choice for automated control systems because of its low on-state resistance and its ability to work with low voltage logic levels. It can also be used in voltage converters where its low on-state resistance allows for maximum power output. Additionally, it can be used in power amplifiers due to its fast switching speed and low on-state resistance. This makes it an ideal choice for many applications.
Now, let us take a look at the working principle of the R6015ANJTL. This transistor is based on the MOSFET (metal oxide semiconductor field effect transistor) structure. This structure is composed of four basic parts: a source, a drain, a gate, and a body (also known as substrate). When the transistor is turned on, a flow of electrons passes from the source to the drain and the transistor is said to be in its “on” state. To turn the transistor off, the gate voltage must be pulled to 0V, which causes the flow of electrons to stop and the transistor to be in its “off” state.
The R6015ANJTL is a versatile transistor that can be used in a variety of applications. Its low on-state resistance and fast switching speed make it ideal for automated control systems, voltage converters, and power amplifiers. Additionally, understanding the basic structure and working principle of this transistor can help you to better understand its capabilities and how to properly use it in your projects.
The specific data is subject to PDF, and the above content is for reference
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