RCD041N25TL Allicdata Electronics

RCD041N25TL Discrete Semiconductor Products

Allicdata Part #:

RCD041N25TLTR-ND

Manufacturer Part#:

RCD041N25TL

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 250V 4A CPT3
More Detail: N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surfac...
DataSheet: RCD041N25TL datasheetRCD041N25TL Datasheet/PDF
Quantity: 1000
2500 +: $ 0.16620
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1300 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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RCD041N25TL is a field-effect transistor, or FET. While not as versatile as a bi-polar junction transistor, it serves a very important role in many circuit applications. It is also known as a metal-oxide-semiconductor field-effect transistor, or MOSFET, and is typically used in high-power and high-frequency applications where switching speed is important. In this article, we will discuss the application field and working principle of RCD041N25TL.

Application Field

The RCD041N25TL is ideal for applications that require high switching speed, such as in computer and communication systems or power supplies. It is also suitable for audio power amplifiers, power supplies and high-speed switching applications. Being a low on-resistance and low gate threshold MOSFET, it is suitable for low voltage power applications and ensures low switching losses.

Working Principle

The RCD041N25TL is a MOSFET. It consists of a source and a drain, connected to the substrate. The gate is where the electrical field is changed to control the flow of current, allowing current to flow when a voltage is applied to the gate. The source is connected to the negative side of the electrical field, and the drain is connected to the positive side. The gate controls the direction and strength of the electrical field, so that when the source is negative and the drain is positive, current will flow from the source to the drain.

When the RCD041N25TL is off, the gate voltage is zero and the channel (the area between source and drain) does not conduct current. When a positive voltage is applied to the gate, the channel widens, allowing current to flow from the source to the drain. As a result, current flows and the RCD041N25TL will be in the on state.

The RCD041N25TL also has a very low on-resistance, meaning it can switch at high speeds and low voltage, making it ideal for many applications. In addition, it is also very reliable, with a high-temperature and high-humidity rating.

The RCD041N25TL is a powerful choice for applications where switching speed is important. Its low on-resistance and gate threshold make it perfect for high-frequency and high-power applications, such as computer and communication systems or power supplies. Its low switching losses and reliable performance also make it a great choice for audio power amplifiers, power supplies and other high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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