RCD075N19TL Discrete Semiconductor Products |
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Allicdata Part #: | RCD075N19TLTR-ND |
Manufacturer Part#: |
RCD075N19TL |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 190V 7.5A CPT3 |
More Detail: | N-Channel 190V 7.5A (Tc) 850mW (Ta), 20W (Tc) Surf... |
DataSheet: | RCD075N19TL Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.29635 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 336 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drain to Source Voltage (Vdss): | 190V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RCD075N19TL is a transistor, or more specifically, a Field Effect Transistor (FET) of the single type. FETs are a type of transistor often used in analog and digital circuits, featuring a number of unique characteristics relative to other types of transistors. This particular part is a low-voltage, non-Polar Junction Field Effect Transistor (JFET) with ultra-small power Mosfet type.
Applications
The RCD075N19TL is most often used in applications requiring low output capacitance, low gate charge and low gate-source voltage. It is often used in radio frequency amplifiers and power switches, as well as analog applications that require precision and control stability. Its small size and low power usage make it also ideal for portable electronics and other power-sensitive applications.
Working Principle
FETs have three pins, the source, gate and drain. The source and drain are the current-carrying pins and the gate is the controlling pin. When voltage is applied to the gate, a conducting channel, or “field”, is formed between the source and drain pins, allowing current to flow. FETs, as opposed to bipolar transistors, are unipolar devices, meaning only one type of current carrier can flow through the channel. This makes FETs especially useful in digital logic circuits.
The RCD075N19TL is a N-channel JFET, meaning that the conducting channel is created when a negative voltage is applied to the gate. The two primary characteristics that separate the JFET from other FETs is their higher input impedance (making them better suited for sensitive amplifiers) and their lack of “punch-through” (where the drain pin saturates with even high negative voltages and prevents further conduction).
Conclusion
The RCD075N19TL is a low-voltage, non-Polar Junction FET of the single type. It is typically used in analog and digital applications, such as radio frequency amplifiers, power switches and precision circuits, where ultra-small size or low power consumption is required. It is a N-channel type, meaning that a negative voltage is applied to the gate to create a conducting channel. The JFET type of this FET offers higher input impedance than other types, and the lack of “punch-through” can prove useful in precision and stability requirements.
The specific data is subject to PDF, and the above content is for reference
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