RCD050N20TL Allicdata Electronics
Allicdata Part #:

RCD050N20TL-ND

Manufacturer Part#:

RCD050N20TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 5A CPT3
More Detail: N-Channel 200V 5A (Ta) 20W (Tc) Surface Mount CPT3
DataSheet: RCD050N20TL datasheetRCD050N20TL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 618 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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RCD050N20TL is a common source N-channel power MOSFET. It is ideal for switching applications, such as DC-DC converters, and can be used in both low and high side systems. It features a low on-state resistance and a relatively low gate-source threshold voltage, which makes it well suited to both low and high current switches. RCDF050N20TL also features a fast switching speed and excellent thermal properties.

The RCD050N20TL is an enhancement-mode, N-channel power MOSFET with an integrated gate-body-diode used for performance optimization. Its main application field is for controlled switching of power devices. It has superior switching speed and thermal performance due to its high switching frequency, low on-state resistance, and fast dynamic response time.

In order to make the RCD050N20TL switch properly, the gate threshold voltage (V_gs th) must be applied during startup. When a positive voltage (V_gs th) is applied to the gate, the device becomes activated and conductive. A negative voltage (V_g th) should reduce the Applied Voltage (V_gs) to less than V_gs th in order to deactivate the device. Because of its low gate-source threshold voltage (V_gs th), the channel can open at voltages as low as 4V. The drain-source voltage (V_ds) should remain within recommended voltage limits in order to ensure proper performance.

The working principle of the RCD050N20TL consists of two components: a voltage dependent on-off switch and a body diode. The voltage-controlled switching mechanism allows power to be applied to the drain in response to a positive voltage applied to the gate. The body diode, on the other hand, allows power to be conveniently and quickly disconnected from the drain by simply reversing the Gate voltage.

The RCD050N20TL is a high performance MOSFET for controlled switching of power devices. It is well suited for a wide range of applications due to its superior switching speed and thermal performance. It is suitable for both low and high side systems and can be used in DC-DC converters, power supply circuits and other power control applications.

The specific data is subject to PDF, and the above content is for reference

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