Allicdata Part #: | RCD075N20TL-ND |
Manufacturer Part#: |
RCD075N20TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 7.5A CPT3 |
More Detail: | N-Channel 200V 7.5A (Tc) 850mW (Ta), 20W (Tc) Surf... |
DataSheet: | RCD075N20TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 755pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 325 mOhm @ 3.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RCD075N20TL is a type of Power MOSFET developed by ROHM Semiconductor. It is a device designed to switch large currents and voltages in a wide variety of applications. This MOSFET is designed using a wide bandwidth matched N-channel power MOSFET technology which is optimized for superior conduction and ruggedness. The device is available in two packages, TO-220 and TO-3PT and is rated for drain-source voltage of up to 200V, drain current up to 75A, and a maximum gate-source voltage of up to 20V. It also has a low gate charge with excellent dV/dt capabilities.
The RCD075N20TL has many application fields. It can be used in motor control and DC-DC converters to provide precise speed control and efficient management of power. It can also be used in power supplies as it can handle fast moving higher power currents. It can be used in amplifiers as well, making it ideal for professional audio devices. The device can even be used in automotive applications, thanks to its wide temperature range and low parasitic capacitances which provides low EMI for the vehicle.
The MOSFET works by using electrons from a conducting material (e.g. metal or semiconductor). When a voltage is applied to the gate, the electrons will be attracted to the gate, resulting in a thin insulation layer between the gate and the body of the MOSFET. This insulated layer prevents current from flowing from the source to the drain, since the drain-side of the transistor is at a lower potential than the source-side. When the gate potential is greater than the source potential, current will flow and the MOSFET will be “on”.
In summary, the RCD075N20TL is a type of power MOSFET designed by ROHM Semiconductor. It is available in two package types and is capable of handling large currents and voltages in a wide variety of applications. The device has a wide range of applications, such as DC-DC converters, power supplies, amplifiers, and automotive applications. It works by using electrons attracted to the gate by an applied voltage, forming an insulated layer in between the gate and the body which prevents current from flowing from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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