RCJ100N25TL Discrete Semiconductor Products |
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Allicdata Part #: | RCJ100N25TLTR-ND |
Manufacturer Part#: |
RCJ100N25TL |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 250V 10A LPT |
More Detail: | N-Channel 250V 10A (Tc) 1.56W (Ta), 40W (Tc) Surfa... |
DataSheet: | RCJ100N25TL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.52164 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (SC-83) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RCJ100N25TL is a power metal oxide semiconductor field effect transistor (MOSFET) designed for switching applications. This transistor exhibits excellent thermal stability and fast switching characteristics, making it an ideal choice for a wide range of applications. The maximum drain current at the gate voltage of 2.5 volts is 100 amperes, and the maximum drain-source voltage (VDD) is 50 volts. Furthermore, this device has a low on-resistance of < 0.25 ohm, making it perfect for power-switching applications.
MOSFETs are transistors that are widely employed in modern integrated circuit (IC) designs, offering better performance than traditional bipolar junction transistors (BJTs). MOSFETs are unipolar devices, meaning that they can only be operated as a switch and cannot be used for amplification. The gate voltage controls the drain current, which can be used to switch small signals on and off with low power loss. When the gate voltage is higher than the threshold voltage, the channel is formed between the source and drain, and the electrons can flow freely through the channel.
The RCJ100N25TL is designed with a N-channel MOSFET construction, which means that the drain current is inversely proportional to the gate voltage. This structure offers low on/off ratios and fast switching times. The threshold voltage of the RCJ100N25TL is 2.5 volts and the maximum drain-source breakdown voltage is 50 volts. The RCJ100N25TL exhibits excellent thermal stability, enabling it to withstand temperatures up to 175°C. This device features an industry-standard, low drain-source on-resistance of typically < 0.25 ohms and a maximum drain current of 100 amperes - making it perfect for several types of power switching applications, including motor control and power conversion.
The RCJ100N25TL offers many advantages over conventional BJT technologies, such as low on-resistance, low gate threshold voltage, and fast switching times. Its low on-resistance, combined with its fast switching times, make the RCJ100N25TL a popular choice for many types of power switching applications. The RCJ100N25TL has a wide range of applications, including motor control, DC-DC power converters, power distribution, solenoid control, and switching regulators.
The RCJ100N25TL is an excellent choice for applications that require high current handling, fast switching, and a wide operating temperature range. This device is well-suited for various applications, such as motor control, DC-DC power converters, power distribution, solenoid control, and switching regulators. The RCJ100N25TL offers a wide range of benefits and is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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