RCJ160N20TL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1370pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1.56W (Ta), 40W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LPTS
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Introduction to RCJ160N20TL

RCJ160N20TL is a series of single N-channel MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This device offers large power capabilities, low threshold voltage, low on-resistance and high current capabilities, making it suitable for various applications. This article is intended to describe the application field, working principle and characteristics for this device.

Application Field

The RCJ160N20TL is designed for power switching, motor control circuits, DC-DC converters, and other applications that require high current density and low on-resistance capabilities. RCJ160N20TL device can also be used in automotive, consumer and industrial electronics, robotics, and many other applicable areas.

Working Principle and Characteristics

The RCJ160N20TL is a single N-channel MOSFET and when operating, the electron mobility and drive strength are increased by a predetermined gate voltage. This novel design offers high current driving capability and low on-resistance in a smaller package than compared to other similar types of transistors.The device is gate-controlled and features diode-polarity protection which provides further protection against transient events. This improved construction helps to manage high-frequency switching and low-level signal attenuation. The drain source breakdown voltage is set to 20 V and it offers a continuous drain current at the rated temperatures of up to 160 A. The maximum allowable power dissipation is up to 540 W.In addition, the RCJ160N20TL device offers low gate charge, which helps to minimize switching losses, maximize efficiency and reduce electro-magnetic using a minimum number of power cycles for providing the required results.

Conclusion

The RCJ160N20TL is a single N-channel MOSFET designed for high current and low on-resistance applications. It offers a low threshold voltage, high current and large power capabilities, as well as diode-polarity protection. This device can be used in automotive, consumer and industrial electronics, robotics, and many other applicable areas.

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