RCJ120N20TL Allicdata Electronics

RCJ120N20TL Discrete Semiconductor Products

Allicdata Part #:

RCJ120N20TLTR-ND

Manufacturer Part#:

RCJ120N20TL

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 12A LPT
More Detail: N-Channel 200V 12A (Tc) 1.56W (Ta), 40W (Tc) Surfa...
DataSheet: RCJ120N20TL datasheetRCJ120N20TL Datasheet/PDF
Quantity: 1000
1000 +: $ 0.35320
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS (SC-83)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RCJ120N20TL Application Field and Working Principle

The RCJ120N20TL is a single N-Channel insulated-gate field-effect transistor (IGFET). It is specifically designed to provide greater resistance to high speed switching loads, increasing the efficiency of switching applications. The field-effect transistors use three distinct regions for channel effect transistors: a source, a drain, and a gate. The source and the drain are connected to separate electrical contacts. The gate connects the source and the drain by controlling the flow of current between them. The field-effect transistors allow the user to select from a wide variety of ways to control the current flow.

The RCJ120N20TL is a n-channel metal-oxide-semiconductor field-effect-transistor that is capable of switching higher power levels with a lower gate voltage. The RCJ120N20TL is powered-up with low gate voltage (< 15V) and features a single-channel MOSFET design that provides excellent efficiency when dealing with high-speed switching applications.

The RCJ120N20TL is designed to operate at higher load as well as lower gate electrical variations. This transistor is also capable of reducing switching losses to a minimum, enhancing the performance of power transistors. The transistor switches current flow by controlling the conductivity of n-channel by the voltage bias of the gate. When positive potential is applied to the gate of n-type channel it enhances the conductivity of the channel and current start to flow.

The RCJ120N20TL field-effect transistor has various applications including the field of Load line driver, Protectors, Amplifiers, Analog circuit, and Voltage Regulators. It is an ideal choice for applications that require a low-voltage, low-power solution capable of operating at high frequencies. Examples of such applications include motor control, switching power supplies, photovoltaic/solar inverter protection, and DC-DC switch-mode converter circuit.

In addition to these features, the RCJ120N20TL transistor is also RoHS compliant and provides excellent electrical characteristics with high performance, which make it a great choice for several different applications. The transistor can be used to control the voltage applied to the load and to drive current through the device. This feature allows for a wide array of applications in which the current is controlled.

In conclusion, the RCJ120N20TL is a single N-Channel insulated-gate field-effect transistor capable of switching higher power levels with a lower gate voltage. This transistor is suitable for a wide range of applications, including load line drivers, PCB protectors, amplifiers, analog circuits, and voltage regulators. It is suitable for applications that require a low-voltage, low-power solution capable of operating at high frequencies and has excellent electrical characteristics with high performance.

The specific data is subject to PDF, and the above content is for reference

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