RCJ120N25TL Discrete Semiconductor Products |
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Allicdata Part #: | RCJ120N25TLTR-ND |
Manufacturer Part#: |
RCJ120N25TL |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 250V 12A LPT |
More Detail: | N-Channel 250V 12A (Tc) 1.56W (Ta), 40W (Tc) Surfa... |
DataSheet: | RCJ120N25TL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.40210 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (SC-83) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RCJ120N25TL is a field-effect transistor, more specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are among the most commonly used transistors because of their high switching speed, low input capacitance, and low power consumption. The RCJ120N25TL is a component specifically designed for application in the telecommunications industry, particularly for use in cellular, satellite, and other wireless devices. The component is a unipolar device, meaning that it is capable of controlling current in only one direction. It is also a surface mount component, making it easier to design and implement into various devices.
The RCJ120N25TL component is used in various applications due to its advantages and features including its low cost, small form factor, fast switching speed, and low power consumption. It is commonly used in power and wireless communication applications, such as power amplifiers, beamforming networks, and active antennas. The component is also often used in applications that require high voltage and power, such as medical imaging, battery charge controllers, and power supplies.
The working principle of the RCJ120N25TL involves the use of two metal oxide layers – one to control the voltage applied to the gate and the other to control the current flowing through the device. The gate controls the current flowing between the source and drain electrodes, as well as the potential difference between them. When a voltage is applied to the gate, it induces a current in the channel between the source and drain electrodes, allowing current to flow through the component. This current can then be used to drive various loads or devices, depending on the application.
Overall, the RCJ120N25TL is a very efficient and reliable component for use in various power and communication applications. Its features, including its small form factor, low cost, fast switching speed, and its ability to handle high voltages and currents, make it a great option for a variety of applications. It is commonly used in telecommunications, power supplies, and medical imaging.
The specific data is subject to PDF, and the above content is for reference
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