Allicdata Part #: | RFP14N05-ND |
Manufacturer Part#: |
RFP14N05 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 14A TO-220AB |
More Detail: | N-Channel 50V 14A (Tc) Through Hole TO-220AB |
DataSheet: | RFP14N05 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
FET Feature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The RFP14N05 is a field effect transistor (FET) that operates as a P-channel enhancement type with an integrated body diode and is manufactured by Fairchild Semiconductor. The device is rated for operations up to a VGSS voltage of 40V and a nominal Id (drain to source current) of -8A. It has an on-resistance (Ron) of 5.8 ohms at 4.5 volts and is suitable for use in high power applications including motor-control, Automotive, and even industrial applications.
This FET was designed for use in applications that require switching and controlling of large currents and voltages. It can be used for switching, level shifting, and even audio amplifiers. The device is constructed from high-quality silicon technology and has an ultra-low capacitance level which ensures a very low noise operation and low power consumption. The device has a maximum junction temperature rating of 150°C and a forward transconductance of 72 S per channel.
The RFP14N05 has a simple working principle. The device utilizes FETs which are solid-state devices that utilize a gate electrode to control the flow of current through the device. When a voltage is applied to the gate, the electrons in the FET channel will be attracted to the gate and a "channel" will be created between the drain and source electrodes of the FET. This channel allows current to flow and the size of the channel will depend on the voltage applied to the gate.
This FET is a great choice for various applications due to its simple and reliable working principle. The device has a very low on-resistance which makes it suitable for high power applications. The device is also capable of operating at high temperatures which makes it suitable for automotive and industrial applications. The device is also capable of providing ultra-low noise operation and low power consumption.
In conclusion, the RFP14N05 is an ideal choice for applications that require switching and controlling large currents and voltages. Its simple operation, low Ron and high temperature operation makes it suitable for many applications. The device offers ultra-low noise operation and low power consumption which makes it very versatile and useful in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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