Allicdata Part #: | RFP15P05-ND |
Manufacturer Part#: |
RFP15P05 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 15A TO-220AB |
More Detail: | P-Channel 50V 15A (Tc) 80W (Tc) Through Hole TO-22... |
DataSheet: | RFP15P05 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The RFP15P05 FET is an enhancement mode MOSFET designed for use in low loss, high current switching applications. The transistor has high input impedance and low output capacitance for minimized power losses, making it suitable for high frequency circuits. It features an integrated low-power diodes for higher efficiency and maximum reliability.
The device is designed with a dielectric layer between the gate and source terminals, forming an insulated gate—or in other words an insulated gate field effect transistor—allowing a small drain-to-source voltage to be applied and controlling the current flow. Depending on the voltage applied the RFP15P05 behaves like a switch, opening or closing the current path between Drain and Source.
In switching applications, the transistor is typically used in an ON-OFF function to drive a load. It can be used to turn on a load (turn on a relay, light, motor, etc) upon a positive input voltage or turn a load off upon a negative input voltage. Typically, when a positive voltage at the gate is greater than the voltage at the source, the transistor will be ON. It is generally easier to turn a transistor ON or OFF than with bipolar transistors, as very little current usually needs to be applied to the gate for it to operate properly.
In switching applications, the device can also be used in a linear configuration as an amplifier, allowing voltage to be controlled or shunted to an appropriate level within a specific range. For example, it can be used to increase or decrease the voltage applied to a device (such as a motor, relay or light bulb) in order to control its speed, power or intensity.
In terms of its construction, the RFP15P05 is a monolithic integrated circuit made using the latest high-density, innovative 3-D integration process. This reduces the number of unnecessary components, allowing the FET to occupy less board space, while offering better thermal and electrical performance.
In addition, the RFP15P05 also has built-in over-voltage protection, allowing it to remain operational even when subjected to unforeseen high voltage events. This prevents unintentional current flow, protection components and even system shutdown.
The high-performance processor design of the RFP15P05 also offers high switching speed and low threshold voltage, making it suitable for use in high-performance applications such as gaming systems and multimedia devices. It also has an efficient internal ESD structure to ensure greater reliability, and is designed to be suitable for consumer and industrial applications.
The RFP15P05 can be used in a variety of applications, including power switching and highlighting, motor speed control, lighting control, power supply design, and in other high-frequency circuits. It can also be used in switching power supplies and active filters. Due to its high input impedance and efficient design, it can be used in communication systems, data acquisition systems and other dedicated circuits requiring low-noise, rapid switching.
The RFP15P05 FET is a modern enhancement mode MOSFET that offers exceptional efficiency, high switching speed and low capacitance. Its unique 3-D integration process results in low power losses, making it an excellent choice for low voltage, high current, high frequency applications. It has built-in protection features and is suitable for both consumer and industrial applications, offering high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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