RFP14N05L Allicdata Electronics
Allicdata Part #:

RFP14N05L-ND

Manufacturer Part#:

RFP14N05L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 14A TO-220AB
More Detail: N-Channel 50V 14A (Tc) 48W (Tc) Through Hole TO-22...
DataSheet: RFP14N05L datasheetRFP14N05L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Feature: --
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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RFP14N05L is a type of field-effect transistor (FET) and belongs to the family of identified as enhancement mode MOSFETs. It is a type of single transistor that is fabricated using the latest process technology, providing superior performance and reliability. As part of a larger family of FETs, RFP14N05L can also be used to create integrated circuits (ICs) such as amplifiers and switches.

The basic structure of a FET is similar to a bipolar junction transistor (BJT), but it has a gate, source, and drain instead of the base, collector and emitter. The FET has an insulated gate that, when activated with the correct voltage, allows electric current to flow from the source to the drain. FETs are usually divided into three main types – depletion mode, enhancement mode, and symmetrical mode. RFP14N05L is an enhancement mode MOSFET.

An enhancement mode MOSFET is one in which the electrical impedance is off when the gate-source voltage is zero and increases significantly as the gate-source voltage is increased. This type of FET requires a voltage to be applied to turn it on, and can be used in a range of applications where the gate-source voltage is not readily available.

RFP14N05L offers its users a wide range of features including an low on-resistance of <400 mΩ, 45V gate-drain voltage and a drain-source breakdown voltage rating of 60V. It is typically used as a power FET in switching power supplies with high efficiency, allowing the system to operate at higher frequencies and lower power dissipation. Additionally, its small size (the RFP14N05L has a package size of SO-8) allows for increased functionality in confined spaces.

To operate a RFP14N05L, it requires a gate-source voltage of a minimum of 10V to turn it on or off. The maximum power it can handle is 600mW, with a maximum operating temperature of 125℃. This is backed up with a Drain-source resistance of 35Ω, allowing the user to drive up to 40A through the FET. Furthermore, its guaranteed ruggedness makes it an excellent choice for applications including DC-DC converters, PWM controllers, relays, and low- and high-side switches.

Overall, the RFP14N05L offers an impressive range of features which cover a variety of applications. Its low on-resistance, high current handling capability and thermal performance makes it an ideal choice for a range of switching and control applications. Furthermore, its small size and ease of use make it one of the most popular FETs for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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