| Allicdata Part #: | RFP3055-ND |
| Manufacturer Part#: |
RFP3055 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 12A TO-220AB |
| More Detail: | N-Channel 60V 12A (Tc) 53W (Tc) Through Hole TO-22... |
| DataSheet: |  RFP3055 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 53W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 20V |
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The RFP3055 is a type of N-channel enhancement-mode vertical DMOS FET that can be used in a wide range of applications. It is designed to be used in a variety of environments, including communication systems, automotive, industrial, and consumer electronics. The RFP3055 is a very power efficient device, allowing for energy savings in its application.
The RFP3055 uses a vertical DMOS structure which allows for the device to be easily scalable and reliable. The vertical DMOS structure also offers very high input impedance, making it well suited for use in high-frequency circuits. The device package also makes it very easy to install and is suitable for both through-hole and surface mount applications.
In terms of working principle, the RFP3055 has an insulated-gate FET or IGBT offering low input capacitance and shared gate structure which makes the device easily tunable to different gate voltages. When a voltage is applied to the gate of the FET the JFET\'s channel is opened allowing for current to flow through the device. In order to turn the FET off, the gate voltage must be reversed allowing the device to remain in a non-conductive state.
The device has a very low resistance value, making it ideal for use in high-current switching and high-power applications. The device offers a fast switching speed of up to 8 µs which makes it suitable for high-frequency applications. The device also offers a low RDS on-state resistance which makes it more efficient than other FETs.
The RFP3055 is a versatile device with a wide array of applications in various fields. In communications systems, it can be used as a synthesizer, amplifier, modulator and detector. It can be used as a power supply and protection circuit in automotive applications. In industrial applications, it can be used for temperature control, motor speed control, brake control and voltage regulation. The RFP3055 is also used in consumer electronics for power switching, audio switching and AC/DC converters.
In conclusion, the RFP3055 is a type of N-channel enhancement-mode vertical DMOS FET that can be used in a variety of applications. It offers low on-state RDS resistance, fast switching speed and low input capacitance. It is an ideal device for power and communications systems, automotive and industrial applications, as well as consumer electronics.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RFP3055 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A TO-22... |
| RFP3055LE | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 11A TO-22... |
| RFP30N06LE | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 30A TO-22... |
| RFP30P05 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 50V 30A TO-22... |
| RFP30P06 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 30A TO-22... |
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