RFP30N06LE Allicdata Electronics
Allicdata Part #:

RFP30N06LE-ND

Manufacturer Part#:

RFP30N06LE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 30A TO-220AB
More Detail: N-Channel 60V 30A (Ta) 96W (Tc) Through Hole TO-22...
DataSheet: RFP30N06LE datasheetRFP30N06LE Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 47 mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
FET Feature: --
Power Dissipation (Max): 96W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The RFP30N06LE is a N-Channel Logic Level Field Effect Transistor that can be used as a switch or an amplifier. It is a highly efficient device with an excellent power efficiency level which makes it an ideal device for applications in car audio, lighting control, and battery operated equipment. The RFP30N06LE is a normally-on device that is able to handle up to 30V and up to 55 amps of current with very low on-resistance. It also has excellent thermal characteristics and can operate at temperatures up to 175°C without any degradation of performance.

The RFP30N06LE is a vertical DMOS FET of the 30V class. It is constructed using DMOS technology, and has an optimized gate structure to provide fast switching and low gate charge. This also makes it ideal for high speed pulsed circuit applications. The device features over temperature, over current and over voltage protection, as well as ESD protection. It also has low gate-to-source and gate-to-drain capacitance, allowing for less switching losses.

The working principle for the RFP30N06LE is based on the fact that it is a FET (Field Effect Transistor) which means that current only flows through the device when a voltage is placed on the gate. This voltage, in turn, actives an electric field which creates a "channel" on the substrate allowing current to flow from the source to the drain. Depending on the amount of voltage applied to the gate, this allows the device to be used in a wide range of applications and can be used to either turn on (high voltage) or turn off (low voltage) the flow of current.

The RFP30N06LE has a wide range of application fields. These include power supplies, displays and microcontrollers, automotive systems, robotics, industrial equipment and many other such applications. It can be used as a switch to turn on or off the flow of power or current, as an amplifier to increase or decrease the power or current, or as a regulator to control the current or power. It can also be used to create highly efficient converters and can replace larger transistors in smaller circuits. In automotive applications, it is used to control lighting, audio and instrumentation systems, and to regulate the flow of current to the battery.

The RFP30N06LE is a highly efficient, reliable and cost effective device that can be used in a wide range of application fields. Its excellent power efficiency makes it ideal for applications requiring low power, while its over temperature, over current and over voltage protection ensure that it remains functioning reliably in sensitive applications. Its high speed pulsed circuit capabilities, combined with its low gate-to-source and gate-to-drain capacitance, make it an ideal choice for applications requiring fast switching and minimal loss.

The specific data is subject to PDF, and the above content is for reference

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