| Allicdata Part #: | RFP3055LE-ND |
| Manufacturer Part#: |
RFP3055LE |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 11A TO-220AB |
| More Detail: | N-Channel 60V 11A (Tc) 38W (Tc) Through Hole TO-22... |
| DataSheet: |  RFP3055LE Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 107 mOhm @ 8A, 5V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 38W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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The RFP3055LE is a 30V, 55A, 55mΩ N-channel power MOSFET available in the TO-220FP package, suitable for use in switching and amplifier applications, as well as power supply in industrial, communication and automotive applications. This MOSFET provides a very low on-resistance when compared to the other power MOSFETs and is developed for use in various applications where superior power handling and very low on-resistance are required.
The RFP3055LE has a very low ON-state resistance along with fast switching speed. This greatly contributes to the efficiency of power switching applications as more energy is transferred with very little energy loss. This also allows for faster switching speeds as there is less energy to dissipate along the way. The external body diode of the MOSFET also provides faster reverse recovery times which help to reduce switching losses.
The RFP3055LE is typically used in high-power switching and amplifying applications, as well as power supply applications in industrial, communication, and automotive applications. It can also be used in switching in solar power systems and LED lighting applications, as well as in DC-DC converters and power supply units. In addition to its low on-resistance and fast switching speed, the RFP3055LE also offers superior noise protection as it contains an integrated electrostatic discharge (ESD) protection circuitry.
The RFP3055LE operates on the principle of “enhancement-mode” MOSFET which means that it requires positive gate voltage to be turned on. This gate voltage must be at least greater than the threshold voltage in order for the RFP3055LE to turn on. This principle of operation is based on the fact that a positive voltage on the gate that is greater than the threshold voltage causes an electric field to be generated at the gate-channel interface, which ultimately results in the inversion of the certain areas of the channel. This consequently changes the resistance at the gate-channel junction which ultimately results in a decrease in the on-state resistance of the device.
In addition to this, another principle of operation of the RFP3055LE is its Safe Operating Area (SOA). The SOA defines the maximal voltage, current and power that can be applied to the device considering the temperature of the device and heat dissipation into its environment. Exceeding the SOA may potentially lead to permanent damage to the device and could result in potential explosion of the device.
The RFP3055LE is a great choice for applications where superior power handling and very low on-resistance are required. Its very low ON-state resistance, fast switching speed and SOA protection make it a dependable choice for high-power switching and amplifying applications, as well as power supply applications in industrial, communication, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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