RFP30P05 Allicdata Electronics
Allicdata Part #:

RFP30P05-ND

Manufacturer Part#:

RFP30P05

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 30A TO-220AB
More Detail: P-Channel 50V 30A (Tc) Through Hole TO-220AB
DataSheet: RFP30P05 datasheetRFP30P05 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
FET Feature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The FET RFP30P05 is a single N-channel MOSFET, one of the most commonly used transistors today. Its outstanding characteristic is the low on-state resistance, which makes it suitable for a wide range of applications. This article will discuss the application field and working principle of the RFP30P05.

Applications: The RFP30P05 is ideal for power switching applications such as motor controllers, power supply controllers, solenoid and lamp drivers, audio amplifiers, and voltage regulators. It is also commonly used in consumer electronics, such as gaming consoles and audio devices. Additionally, it is suitable for applications that require either a linear or a switching mode of operation with low on-state resistance, such as analog applications, switching power supplies, battery chargers, and DC-DC converters.

Working principle: The RFP30P05 is a three-terminal, N-channel enhancement-mode MOSFET; the drain, gate and source terminals. Unlike bipolar transistors, the gate of a MOSFET does not require a current to switch the device since it is a voltage-controlled device. When a voltage is applied to the gate and source terminals of the FET, a conducting channel is formed between the drain and source terminals. This conducting channel allows current to flow between them when a voltage is applied to the drain and source terminals. The current between the drain and source terminals is proportional to the voltage applied to the gate terminal and the amount of current is limited by the on-state resistance of the device.

The RFP30P05 has a low on-state resistance, making it well-suited for power switch applications. This low on-state resistance minimizes power dissipation and allows for a highly efficient and reliable operation. The RFP30P05 is also capable of switching very quickly, making it suitable for high-speed applications. The RFP30P05 has a maximum drain current of 30A and a maximum drain-source voltage of 100V, making it a robust and reliable power switch.

In summary, the RFP30P05 is a three-terminal, N-channel enhancement-mode MOSFET and is suitable for switching applications. Its low on-state resistance and high speed makes it ideal for power switch applications such as motor controllers, power supply controllers, solenoid and lamp drivers, audio amplifiers, and voltage regulators. The RFP30P05 is a robust and reliable switch with a maximum drain current of 30A and a maximum drain-source voltage of 100V, allowing for high speed operation with low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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