Allicdata Part #: | RFP30P05-ND |
Manufacturer Part#: |
RFP30P05 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 30A TO-220AB |
More Detail: | P-Channel 50V 30A (Tc) Through Hole TO-220AB |
DataSheet: | RFP30P05 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
FET Feature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The FET RFP30P05 is a single N-channel MOSFET, one of the most commonly used transistors today. Its outstanding characteristic is the low on-state resistance, which makes it suitable for a wide range of applications. This article will discuss the application field and working principle of the RFP30P05.
Applications: The RFP30P05 is ideal for power switching applications such as motor controllers, power supply controllers, solenoid and lamp drivers, audio amplifiers, and voltage regulators. It is also commonly used in consumer electronics, such as gaming consoles and audio devices. Additionally, it is suitable for applications that require either a linear or a switching mode of operation with low on-state resistance, such as analog applications, switching power supplies, battery chargers, and DC-DC converters.
Working principle: The RFP30P05 is a three-terminal, N-channel enhancement-mode MOSFET; the drain, gate and source terminals. Unlike bipolar transistors, the gate of a MOSFET does not require a current to switch the device since it is a voltage-controlled device. When a voltage is applied to the gate and source terminals of the FET, a conducting channel is formed between the drain and source terminals. This conducting channel allows current to flow between them when a voltage is applied to the drain and source terminals. The current between the drain and source terminals is proportional to the voltage applied to the gate terminal and the amount of current is limited by the on-state resistance of the device.
The RFP30P05 has a low on-state resistance, making it well-suited for power switch applications. This low on-state resistance minimizes power dissipation and allows for a highly efficient and reliable operation. The RFP30P05 is also capable of switching very quickly, making it suitable for high-speed applications. The RFP30P05 has a maximum drain current of 30A and a maximum drain-source voltage of 100V, making it a robust and reliable power switch.
In summary, the RFP30P05 is a three-terminal, N-channel enhancement-mode MOSFET and is suitable for switching applications. Its low on-state resistance and high speed makes it ideal for power switch applications such as motor controllers, power supply controllers, solenoid and lamp drivers, audio amplifiers, and voltage regulators. The RFP30P05 is a robust and reliable switch with a maximum drain current of 30A and a maximum drain-source voltage of 100V, allowing for high speed operation with low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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