Allicdata Part #: | RJK2075DPA-00#J5A-ND |
Manufacturer Part#: |
RJK2075DPA-00#J5A |
Price: | $ 0.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CHANNEL 200V 20A WPAK |
More Detail: | N-Channel 200V 20A (Ta) 65W (Ta) Surface Mount WPA... |
DataSheet: | RJK2075DPA-00#J5A Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.77694 |
6000 +: | $ 0.76734 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | WPAK(3F) (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 69 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RKJ2075DPA-00#J5A is a single drain to source, insulated gate, field effect transistor (IGFET). The device is designed to control the electric current from the drain to the source and is used in a wide range of electronic applications.
The RKJ2075DPA-00#J5A is a very versatile device and is used in a range of different applications. It can be used to amplify signals, control power switching, protection against short circuits, and gate protection circuits.
In order to understand the application field and working principle of the RKJ2075DPA-00#J5A, it is important to understand the basic operational principle of a Field Effect Transistor (FET) and how it works. In a FET, an electric field is used to control the current between the source and the drain. A gate voltage is applied to the electrode, which creates a depletion region in the channel. This depletion layer alters the conductivity between the source and the drain. A positive gate voltage to the aid of a negative drain source voltage will cause current to flow between the source and the drain.
In addition to the field effect principle, the RKJ2075DPA-00#J5A has many features that makes it a great choice for a variety of applications. The device is an N-Channel device, which means it can operate with negative gate to drain voltage, keeping current from flowing in the reverse direction from the drain to the source. It is also designed to be very reliable, with low on resistance, fast switching times and low thermal resistance.
The RKJ2075DPA-00#J5A is used in several applications in the automotive industry, such as engine control units (ECUs), powertrain control units (PCUs) and diesel engine management systems, as well as in the aviation industry. Additionally, the device is also used for power switching, signal conditioning, and as part of power switching solutions in various medical and military applications.
In conclusion, the RKJ2075DPA-00#J5A is a highly versatile single drain to source insulated gate field effect transistor. It is used in a wide range of electronic applications and is particularly useful in automotive and aviation industries. It is a reliable, low thermal resistance device with low on resistance and fast switching times, enabling it to be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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