Allicdata Part #: | RJK2508DPK-00#T0-ND |
Manufacturer Part#: |
RJK2508DPK-00#T0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 250V 50A TO3P |
More Detail: | N-Channel 250V 50A (Ta) 150W (Tc) Through Hole TO-... |
DataSheet: | RJK2508DPK-00#T0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 64 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The RJK2508DPK-00#T0 is a single-channel SIP MOSFET with an 800-volt peak working voltage. It offers low on-resistance, fast switching performance and high energy efficiency, which makes it a popular choice for a wide range of applications, including industrial automation, robotics, and power distribution. In this article, we will discuss the application field and working principle of the RJK2508DPK-00#T0.
The RJK2508DPK-00#T0 is most popularly used in industrial applications where high efficiency, high switching speed, and low on-resistance are essential. It is research-grade, P-channel MOSFET, which has excellent performance in high-voltage switching applications that require fast switching speed. It features an 8-pin single-in-line package that enables a minimal parasitic inductance and capacitance, allowing it to achieve a higher power density result.
In terms of working principle, the RJK2508DPK-00#T0 features an N-channel MOSFET integrated circuit comprised of two transistors: a P-channel MOS transistor, and an N-channel MOS transistor. It acts as a voltage-controlled switch in which electrical current can be interrupted using a gate signal. It operates in the enhancement mode, which means it requires a voltage difference between the source and gate terminals for the FET to turn on.
The gate-to-source voltage determines the amount of current that flows when the FET is in an on-state. This voltage controls the gate terminal of the MOSFET, making it possible to regulate the current flow through the FET with great precision. This makes it ideal for applications such as power supplies, motor drivers, and high-voltage switching.
The RJK2508DPK-00#T0 is designed to be a robust and reliable component. It has a maximum drain-source voltage of 200 volts and a peak channel-temperature-controlled operating temperature of 175°C. Additionally, the component features a 250mV typical gate threshold voltage, ensuring a consistent switching performance that is ideal for applications with high-current demands. It also offers an optimized layout design which simplifies design complexity and reduces thermal resistance.
In summary, the RJK2508DPK-00#T0 is a single-channel SIP MOSFET that is ideal for industrial applications requiring high efficiency, high switching speed, and low on-resistance. It offers an 8-pin single in-line package configuration, a gateway source voltage of 200 Volts, and a peak channel temperature of 175°C. Furthermore, its integrated two-transistor design and optimized layout design offer reliability and thermal resistance, making the RJK2508DPK-00#T0 an excellent choice in applications such as industrial automation, robotics, and power distribution.
The specific data is subject to PDF, and the above content is for reference
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