| Allicdata Part #: | RJK2555DPA-00#J0-ND |
| Manufacturer Part#: |
RJK2555DPA-00#J0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 250V 17A TO3P |
| More Detail: | N-Channel 250V 17A (Ta) 30W (Tc) Surface Mount 8-W... |
| DataSheet: |  RJK2555DPA-00#J0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-WPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 104 mOhm @ 8.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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<!DOCTYPE html><html><head> <meta charset="utf-8"> <title>Transistors - FETs, MOSFETs - Single</title></head><body> <h1>RJK2555DPA-00#J0 application field and working principle</h1> <hr> <p>RJK2555DPA-00#J0 is a silicon single N-channel dorsal field effect transistor (FET) manufactured with Fairchild Semiconductor\'s advanced low-voltage process technology. It uses the latest industry standards, including the TO-252-5G plastic encapsulated package.The RJK2555DPA-00#J0 offers high peak conductivity with very low on-resistance for excellent performance and excellent thermal and inductive characteristics. This device can be used in a wide variety of low-voltage and low-power applications, including battery-powered systems, PLLs, video circuits, and analog switch applications.</p> <h2>Main Features</h2> <p>The main features of the RJK2555DPA-00#J0 are as follows:</p> <ul> <li>High peak current</li> <li>Low R DS(ON) for excellent performance</li> <li>Very low saturation voltage</li> <li>Very low switching losses</li> <li>Excellent thermal and inductive characteristics</li> <li>Wide operating temperature range</li> </ul> <h2>Application Field & Working Principle</h2> <p>The RJK2555DPA-00#J0 is an ideal device for use in battery-powered systems, PLLs, video circuits, and analog switch applications. It is suitable for automotive, commercial, and industrial applications that require reliable low-voltage and low-power circuits. It can also be used in various lighting and switching applications.</p> <p>The working principle of the RJK2555DPA-00#J0 is based on the flow of electrons from one region of a semiconductor material to another. This device is a N-channel MOSFET, which means that its channel is created by the presence of electrons. The electrons flow through the channel between the source and the drain when a voltage is applied to the gate terminal. When the voltage at the gate terminal exceeds a certain threshold, the electrons begin to flow between the source and drain, creating a channel in the semiconductor material. As the electrons flow from the source to the drain, a current is created in the channel. This current is used to control other circuits.</p> <h2>Conclusion</h2> <p>The RJK2555DPA-00#J0 is an extremely versatile and reliable device that is well-suited to a variety of low-voltage and low-power applications. It offers high peak current with low on-resistance, making it an ideal device for battery-powered systems, PLLs, video circuits, and analog switch applications. Its excellent thermal and inductive characteristics offer excellent performance and reliability.</p></body></html>The specific data is subject to PDF, and the above content is for reference
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