| Allicdata Part #: | RJK2511DPK-00#T0-ND |
| Manufacturer Part#: |
RJK2511DPK-00#T0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 250V 65A TO3P |
| More Detail: | N-Channel 250V 65A (Ta) 200W (Tc) Through Hole TO-... |
| DataSheet: |  RJK2511DPK-00#T0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4900pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 34 mOhm @ 32.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The RJK2511DPK-00#T0 is an application specific N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device. MOSFET transistors are versatile, high-power electronic switches used in analog and digital circuits. They are the most frequently used kind of transistor in modern electronic systems, such as in audio amplifiers and computer processors. These transistors provide voltage and current control by modulating the resistance between the transistor’s source and drain electrodes. Different types of MOSFET transistors offer different benefits, depending on the design of the application.The RJK2511DPK-00#T0 is a single-channel MOSFET, which means it has a single gate control. The device has an on-state resistance of 0.001 Ohms and a maximum drain-source voltage of 25V. It also has a maximum current rating of 11A and a very low capacitance between gate and drain-source. This means that the transistor is capable of switching larger amounts of current through it and allows for faster switching times.The RJK2511DPK-00#T0 is primarily used in applications such as voltage level shifters, motor control and low-level signal switching. In motor control applications, the transistor is used to control the speed and direction of the motor. The transistor is able to modulate the current going through the motor, allowing precise control. In voltage level shifters, the device is used as an interface between two circuits with different voltage levels, allowing information to be transferred between them without damaging the circuits. In low-level signal switching applications, the transistor is used to control the flow of very small currents, allowing precise control over the circuit.The working principle behind the RJK2511DPK-00#T0 is fairly simple. When a voltage is applied to the transistor, the current flowing between the source and the drain is controlled. This is achieved by changing the resistance between these two electrodes. When a very small voltage is applied to the gate of the transistor, a layer of electrons is attracted and the resistance between the source and drain is reduced, allowing current to flow more freely between them. As the voltage on the gate increases, the resistance between the source and the drain also increases, reducing the current flowing through the transistor. This same principle applies in reverse when the voltage is reduced.In conclusion, the RJK2511DPK-00#T0 is a single-channel MOSFET device designed for a variety of applications. It is capable of modulating the current between the source and drain electrodes in order to control the flow of power in a circuit. The working principle behind the device is fairly simple and is based on changing the resistance between the source and drain by using a voltage to the gate of the transistor. The device is well suited for applications such as voltage level shifters, motor control and low-level signal switching.
The specific data is subject to PDF, and the above content is for reference
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