RJK4002DPP-M0#T2

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The RJK4002DPP- M0#T2 is an high voltage N-channel MOSFET (Metal Oxide Silicon Field Effect Transistor) and belongs to the high-side, hard-switching MOSFET category. It is a highly efficient and reliable device specially designed to handle high voltage and high power switching applications, such as automotive applications and solar panel/inverter applications.

The RJK4002DPP- M0#T2 has been designed to work in switching mode, not in linear mode. It offers a very low on-state resistance which means that it can handle high power and switching frequencies with minimal loss. It is capable of providing the necessary current for application requiring high switching speed with low switching losses. In addition, it offers excellent EMI reduction performance.

This high voltage MOSFET can be used in applications like automotive powertrain, solar inverters, and power supplies. It can also be used in remote sensing, motor control, and high voltage transient surge applications. The device also offers excellent switching times and can handle ESD levels up to 8 kV.

The key features of this high voltage MOSFET are:

• High voltage tolerant up to 600 V
• High switching speeds up to 200 kHz
• Low static dissipation
• Low on-resistance
• High power dissipation
• Excellent EMI reduction performance

The RJK4002DPP- M0#T2 is designed to work with a single power supply and is capable of driving an output voltage of higher than the supply voltage. This is achieved by using an internal voltage boosting circuit which is activated by an input voltage of more than 4 V.

The RJK4002DPP- M0#T2 is designed using an advanced N-channel MOSFET process. This process has the added benefits of decreased power consumption and improved thermal performance. The device is also optimized for low on-resistance and fast switching speed. The improved low RDS(ON) enables the device to switch faster and more efficiently.

The RJK4002DPP- M0#T2 also offers other advantages such as a low leakage current, improved EMI reduction performance and temperature protection. The device also has an under voltage lock-out protection, over current protection and an over voltage protection.

Overall, this high voltage MOSFET is a highly efficient device specially designed for applications which require high power and high speed switching. It provides excellent performance in terms of EMI reduction and thermal management, and is capable of handling various load conditions. This makes the RJK4002DPP- M0#T2 an ideal choice for applications such as automotive powertrain, solar inverters and power supplies.

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