Allicdata Part #: | RJK4006DPD-00#J2-ND |
Manufacturer Part#: |
RJK4006DPD-00#J2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 400V 8A MP3A |
More Detail: | N-Channel 400V 8A (Ta) 65W (Tc) Surface Mount MP-3... |
DataSheet: | RJK4006DPD-00#J2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | MP-3A |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJK4006DPD-00#J2 is a single-channel, enhancement-mode MOSFET which is used in many industrial and consumer applications. It is a power FET with a wide range of operating voltage, current-carrying capacity, and switching speed. The device provides excellent performance and reliability in a wide range of environments.
The RJK4006DPD-00#J2’s application field lies in the power switching and amplification of digital and analog signals in circuit designs. It is suitable for low voltage/high current applications such as DC/DC converters, DC/AC inverters, audio amplifier circuits, precision analog circuits, and motor control circuits. The device can also be used in microprocessor applications for both power management and signal switching. In addition, this MOSFET can be used in a wide range of automotive and industrial applications such as lamps, motors, medical instruments, power supplies, and laser systems.
The working principle of the RJK4006DPD-00#J2 is based on the field-effect principle. This type of MOSFET uses a gate voltage to directly control the conduction channel of the device. When the gate voltage is applied, it creates a localized electric field which modifies the conductivity of the junction between the source and drain, creating a current-carrying channel. The degree of conductivity can be controlled by changing the gate voltage, thereby allowing the device to be used in a variety of applications.
The RJK4006DPD-00#J2 has a maximum drain current of 6A and a maximum on-resistance per channel of 10Ω. The device also has an ultra-low switching noise and low power consumption. The maximum gate-source reverse voltage is 7V and the maximum drain-source breakdown voltage is 60V. It has an exceptionally fast switching speed of 6A/us, making it an ideal device for high-speed power management applications. It has a maximum junction temperature of 175°C and is available in an SOIC package.
In conclusion, the RJK4006DPD-00#J2 is a single-channel, enhancement-mode MOSFET which is used for power switching and amplification of digital and analog signals. It offers excellent performance and reliability and can be used in a wide range of applications. The device has a wide operating range and low power consumption, making it an ideal solution for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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