RJK4518DPK-00#T0 Allicdata Electronics
Allicdata Part #:

RJK4518DPK-00#T0-ND

Manufacturer Part#:

RJK4518DPK-00#T0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 450V 39A TO3P
More Detail: N-Channel 450V 39A (Ta) 200W (Tc) Through Hole TO-...
DataSheet: RJK4518DPK-00#T0 datasheetRJK4518DPK-00#T0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The RJK4518DPK-00#T0 is a dual N-channel enhancement mode vertical D-MOSFET designed to meet the higher switching and avalanche requirements of portable and fixed telecommunications systems.

The RJK4518DPK-00#T0 is designed to reduce switching losses while maintaining superior levels of breakdown voltage and high speed switching. This makes it well suited for use in high frequency circuits, where the reduction in switching losses significantly improves the total efficiency of the system.

RJK4518DPK-00#T0 is an enhancement mode FET, meaning that the current flow between the source and drain terminals is driven by the voltage applied across the gate and source terminals. When a voltage between the gate and source terminals is applied, the electrons in the channel between the two terminals experience a lower barrier height to the gate and move towards the drain terminal, switching on the device. Since the device can be easily switched on and off with a small voltage, it is well suited for use in electronics where speed and power efficiency are paramount.

The RJK4518DPK-00#T0 is specifically designed for use in mobile applications. Due to its small package size, the device can be readily integrated into compact and power efficient designs. The device also has low switching threshold, allowing it to switch more quickly than other MOSFETs. This reduces the time spent switching, improving the efficiency of the circuit.

The RJK4518DPK-00#T0 is suitable for use in a wide range of applications, including switched mode power supplies, synchronous rectification converters, and high frequency circuits. It can also be used as a switch in configurations requiring high speed switching and low power consumption. Applications in which the device is particularly well suited include use in portable and automotive computing, telecom base stations and consumer electronics.

In summary, the RJK4518DPK-00#T0 is a dual N-channel enhancement mode vertical D-MOSFET designed for portable and fixed telecommunications systems. Its small package size, low switching threshold, and high speed switching make it an ideal choice for applications in which power efficiency and speed are paramount. The device can also be used in configurations requiring high speed switching and low power consumption. Additionally, it can be used in a wide range of applications, including switched mode power supplies, synchronous rectification converters, and high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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