RJK4512DPE-00#J3 Allicdata Electronics
Allicdata Part #:

RJK4512DPE-00#J3-ND

Manufacturer Part#:

RJK4512DPE-00#J3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 450V 14A LDPAK
More Detail: N-Channel 450V 14A (Ta) 100W (Tc) Surface Mount 4-...
DataSheet: RJK4512DPE-00#J3 datasheetRJK4512DPE-00#J3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-83
Supplier Device Package: 4-LDPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 510 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJK4512DPE-00#J3 is a single-channel enhancement-mode field-effect transistor, a type of transistor commonly used in modern electronics. This transistor is a fairly high- performance component, and it can be found in a variety of different applications. In this article, we will go over the application field and working principle of the RJK4512DPE-00#J3.

What is a Transistor?

Before we dive into the specifics of the RJK4512DPE-00#J3, it is important to understand what transistors are and why they are so important. A transistor is a type of semiconductor component with three terminals, usually referred to as a gate, a drain, and a source. Transistors can be used to create an electronic switch and amplifier circuit. They are essential components in many modern electronic devices and can be found in a variety of applications, ranging from radios and TVs to computers and mobile phones.

Types of Transistors

There are two main types of transistors, bipolar transistors and field-effect transistors (FETs). Bipolar transistors use two terminals, a base and a collector, while field-effect transistors use three terminals, a gate, drain, and source. Field-effect transistors are made up of two distinct types: junction-gate field-effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). The RJK4512DPE-00#J3 is an example of a MOSFET.

What is the RJK4512DPE-00#J3?

The RJK4512DPE-00#J3 is a single-channel enhancement-mode MOSFET, an acronym for metal-oxide-semiconductor field-effect transistor. This transistor is based on silicon technology and is rated for a drain-to-source voltage of 30V and a drain current of 0.7A. It is housed in a compact, 8-pin surface-mount package, making it ideal for a variety of applications where space is limited.

Application Field

The RJK4512DPE-00#J3 is a high-performance component, and it can be found in a variety of applications. It is often used in digital circuits such as microprocessors and digital signal processors as a switching element. It can also be used for high-frequency amplifier circuits, power management systems, and motor control systems. The RJK4512DPE-00#J3 can also be found in battery-powered devices such as mobile phones and laptops, since it has a low power consumption.

Working Principle

The working principle of a MOSFET is based on the idea that when a small electric current is applied to the gate terminal, it creates a module of electric charge and a region of high impurity concentration near the gate. This reduces the resistance between the drain and source terminals, and allows current to flow. As the voltage applied to gate increases, the gate-source capacitance increases, providing a voltage amplification. This is known as the enhancement mode, and it is the type of operation the RJK4512DPE-00#J3 operates in.

Conclusion

The RJK4512DPE-00#J3 is a single-channel enhancement-mode MOSFET, a type of transistor used in a variety of applications. It is used in digital circuits, high-frequency amplifier circuits, power management systems, and motor control systems. It has a low power consumption, making it ideal for battery-powered devices. The working principle of the RJK4512DPE-00#J3 is based on the idea of applying a small electric current to the gate terminal, creating a voltage amplification effect due to its enhancement-mode operation.

The specific data is subject to PDF, and the above content is for reference

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